Investigation on Sb-rich Sb-Se-Te phase-change material for phase change memory application

	Investigation on Sb-rich Sb-Se-Te phase-change material for phase change memory application
	Wu, LC ; Zhu, M ; Song, ZT ; Lv, SL ; Zhou, XL ; Peng, C ; Rao, F ; Song, SN ; Liu, B ; Feng, SL
刊名	JOURNAL OF NON-CRYSTALLINE SOLIDS
	2012
卷号	358 期号:17 页码:2409-2411
关键词	Sb-rich Sb65Se6Te29 Phase change Reset
ISSN号	0022-3093
通讯作者	Wu, LC (reprint author), Chinese Acad Sci, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China.
中文摘要	Sb-rich Sb65Se6Te29 film was investigated for phase change random access memory (PCRAM) application. The crystallization temperature of the Sb65Se6Te29 film is 174 degrees C and the crystalline activation energy is about 2.7 eV. The 10-years' failure temp
学科主题	Materials Science
收录类别	2012SCI-053
原文出处	10.1016/j.jnoncrysol.2011.12.087
语种	英语
公开日期	2013-04-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114793]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Wu, LC,Zhu, M,Song, ZT,et al. Investigation on Sb-rich Sb-Se-Te phase-change material for phase change memory application[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS,2012,358(17):2409-2411.
APA	Wu, LC.,Zhu, M.,Song, ZT.,Lv, SL.,Zhou, XL.,...&Feng, SL.(2012).Investigation on Sb-rich Sb-Se-Te phase-change material for phase change memory application.JOURNAL OF NON-CRYSTALLINE SOLIDS,358(17),2409-2411.
MLA	Wu, LC,et al."Investigation on Sb-rich Sb-Se-Te phase-change material for phase change memory application".JOURNAL OF NON-CRYSTALLINE SOLIDS 358.17(2012):2409-2411.