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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effect of humic acid on uranium(VI) retention and transport through quartz columns with varying pH and anion type 期刊论文 JOURNAL OF ENVIRONMENTAL RADIOACTIVITY, 2017 Du, Liang; Li, Shicheng; Li, Xiaolong; Wang, Ping; Huang, Zhaoya; Tan, Zhaoyi; Liu, Chunli; Liao, Jiali; Liu, Ning 收藏  |  浏览/下载：32/0  |  提交时间：2017/12/03 Uranium(VI)  Humic acid  Transport  Retention  Adsorption  Breakthrough curve  SATURATED POROUS-MEDIA  IONIC-STRENGTH  SAND COLUMN  FACILITATED TRANSPORT  SURFACE SPECIATION  REACTIVE TRANSPORT  FULVIC-ACID  MIGRATION  SORPTION  SUBSTANCES   Covalent triazine-based framework: A promising adsorbent for removal of perfluoroalkyl acids from aqueous solution 期刊论文 ENVIRONMENTAL POLLUTION, 2016 Wang, Bingyu; Lee, Linda S.; Wei, Chenhui; Fu, Heyun; Zheng, Shourong; Xu, Zhaoyi; Zhu, Dongqiang 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/04 Perfluoroalkyl acids (PFAAs)  Covalent triazine-based framework (CTF)  Adsorption  Electrostatic interaction  Nanosized pore  WATER TREATMENT PLANTS  PERFLUOROOCTANE SULFONATE  PERFLUORINATED SURFACTANTS  ACTIVATED CARBON  WASTE-WATER  PERFLUOROCARBOXYLIC ACIDS  AROMATIC-COMPOUNDS  MASS-SPECTROMETRY  ADSORPTION  SORPTION   Investigations on the physical limitation and electrostatic improvement of a gate-all-around silicon nanowire transistor with Schottky barrier source/drain 期刊论文 semiconductor science and technology, 2009 Kang, Zhaoyi; Zhang, Liangliang; Wang, Runsheng; Huang, Ru 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 DOPANT-SEGREGATED SCHOTTKY  MOSFET TECHNOLOGY  HIGH-PERFORMANCE  ON-INSULATOR  METAL GATE  P-MOSFETS  CMOS  S/D  CHANNEL  BODY   A Comparison Study of Silicon Nanowire Transistor with Schottky-Barrier Source/Drain and Doped Source/Drain 其他 2009-01-01 Kang, Zhaoyi; Zhang, Liangliang; Wang, Runsheng; Huang, Ru 收藏  |  浏览/下载：1/0  |  提交时间：2015/11/16 PERFORMANCE  MOSFETS   New Insights into Oxide Traps Characterization in Gate-All-Around Nanowire Transistors with TiN Metal Gates Based on Combined I(g)-I(d) RTS Technique 其他 2009-01-01 Zhang, Liangliang; Zhuge, Jing; Wang, Runsheng; Huang, Ru; Liu, Changze; Wu, Dake; Kang, Zhaoyi; Kim, Done-Won; Park, Donggun; Wang, Yangyuan 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 RANDOM TELEGRAPH SIGNALS  NOISE  MOSFETS  FLUCTUATIONS  CARRIER   New insights into oxide traps characterization in gate-all-around nanowire transistors with TiN metal gates based on combined Ig-Id RTS technique 其他 2009-01-01 Zhang, Liangliang; Zhuge, Jing; Wang, Runsheng; Huang, Ru; Liu, Changze; Wu, Dake; Kang, Zhaoyi; Kim, Dong-Won; Park, Donggun; Wang, Yangyuan 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13 A Comprehensive Study on Schottky Barrier Nanowire Transistors (SB-NWTs): Principle, Physical Limits and Parameter Fluctuations 其他 2008-01-01 Zhang, Liangliang; Kang, Zhaoyi; Wang, Runsheng; Huang, Ru 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 FIELD-EFFECT TRANSISTORS  PERFORMANCE  SOURCE/DRAIN  MOSFETS