Investigations on the physical limitation and electrostatic improvement   of a gate-all-around silicon nanowire transistor with Schottky barrier   source/drain

doi:10.1088/0268-1242/24/10/105001

CORC > 北京大学 > 信息科学技术学院

	Investigations on the physical limitation and electrostatic improvement of a gate-all-around silicon nanowire transistor with Schottky barrier source/drain
	Kang, Zhaoyi ; Zhang, Liangliang ; Wang, Runsheng ; Huang, Ru
刊名	semiconductor science and technology
	2009
关键词	DOPANT-SEGREGATED SCHOTTKY MOSFET TECHNOLOGY HIGH-PERFORMANCE ON-INSULATOR METAL GATE P-MOSFETS CMOS S/D CHANNEL BODY
DOI	10.1088/0268-1242/24/10/105001
英文摘要	The electrostatics of Schottky barrier (SB) source/drain (S/D) silicon nanowire transistors (SB-NWTs) are investigated in comparison with the conventional silicon nanowire transistors (SNWTs). The SB-NWTs are found to have degraded transfer/output properties, unacceptably large linear-region resistance (R(lin)) and non-uniform gate controllability in the sub-threshold region. With low S/D Schottky barrier height and effective tunneling mass, the electrostatic properties of SB-NWTs can be enhanced. However, quantitative assessment shows that the enhancement is limited by the fact that the sub-threshold swing of SB-NWTs cannot prevail over that of SNWTs, and unexpected degradation in drain-induced barrier lowering (DIBL) as well as device scalability can be induced. It is also shown that, even under the most optimized condition, the R(lin) of SB-NWTs is still larger than that of SNWTs, if the S/D extension (SDE) length of the standard SNWTs is designed to be short enough. It is shown that, from the point of electrostatic improvement, the replacement of SNWTs by SB-NWTs cannot be promising. The physics and effectiveness of Schottky barrier modulation approaches, such as dopant segregation and Fermi-level depinning, are also discussed.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000270219600001&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter; SCI(E); EI; 6; ARTICLE; 10; 24
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152802]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Kang, Zhaoyi,Zhang, Liangliang,Wang, Runsheng,et al. Investigations on the physical limitation and electrostatic improvement of a gate-all-around silicon nanowire transistor with Schottky barrier source/drain[J]. semiconductor science and technology,2009.
APA	Kang, Zhaoyi,Zhang, Liangliang,Wang, Runsheng,&Huang, Ru.(2009).Investigations on the physical limitation and electrostatic improvement of a gate-all-around silicon nanowire transistor with Schottky barrier source/drain.semiconductor science and technology.
MLA	Kang, Zhaoyi,et al."Investigations on the physical limitation and electrostatic improvement of a gate-all-around silicon nanowire transistor with Schottky barrier source/drain".semiconductor science and technology (2009).