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浏览/检索结果: 共12条，第1-10条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Statistical Analysis on Performance Degradation of 90 nm bulk SiMOS Devices Irradiated by Heavy Ions 其他 2016-01-01 Zhexuan Ren; Xia An; Weikang Wu; Xing Zhang; Ru Huang 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 irradiation  saturation  trapped  charges  irradiated  attributed  hardened  intrinsic  leakage  incident  irradiation  saturation  trapped  charges  irradiated  attributed  hardened  intrinsic  leakage  incident   Investigation of a radiation-hardened quasi-SOI device: performance degradation induced by single ion irradiation 期刊论文 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016 Wu, Weikang; An, Xia; Que, Taotao; Zhang, Xing; Shen, Dongjun; Guo, Gang; Huang, Ru 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/04 radiation-hardened  quasi-SOI  microdose effect  heavy ion  irradiation  EVENT TRANSIENTS  MOSFETS  IMPACT  TECHNOLOGIES  LOGIC  BULK   Anomalously large interface charge in polarity-switchable photovoltaic devices: An indication of mobile ions in organic-inorganic halide perovskites 期刊论文 2015 Zhao, Yong; Liang, Chunjun; Zhang, Huimin; Li, Dan; Tian, Ding; Li, Guobao; Jing, Xiping; Zhang, Wenguan; Xiao, Weikang; Liu, Qian; Zhang, Fujun; He, Zhiqun 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices 期刊论文 半导体学报（英文版）, 2015 Wu Weikang; An Xia; Tan Fei; Feng Hui; Chen Yehua; Liu Jingjing; Zhang Xing 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 heavy ion displacement damages PDSOI performance degradation  heavy ion  displacement damages  PDSOI  performance degradation   Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices 期刊论文 半导体学报（英文版）, 2015 Chen Yehua; An Xia; Wu Weikang; Zhang Yao; Liu Jingjing; Zhang Xing; Huang Ru 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 heavy ion displacement damage bulk silicon  heavy ion  displacement damage  bulk silicon   Impact of heavy ion irradiation on CMOS current mirrors based on SOI and bulk Si substrates: mismatch and output impedance 期刊论文 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015 Wu, Weikang; An, Xia; Tan, Fei; Chen, Yehua; Liu, Jingjing; Zhang, Yao; Zhang, Xing; Shen, Dongjun; Guo, Gang; Huang, Ru 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 current mirrors  heavy ions  damage  mismatch  output impedance  single event  PDSOI  MOSFETS  VARIABILITY  MICRODOSE  CIRCUITS  DEVICES  DESIGN   Line-edge roughness induced single event transient variation in SOI FinFETs 期刊论文 半导体学报（英文版）, 2015 Wu Weikang; An Xia; Jiang Xiaobo; Chen Yehua; Liu Jingjing; Zhang Xing; Huang Ru 收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03 heavy ion irradiation single event transient variation line-edge roughness SOI FinFET  heavy ion irradiation  single event transient  variation  line-edge roughness  SOI  FinFET   Impact of heavy ion irradiation on CMOS current mirrors based on SOI and bulk Si substrates: mismatch and output impedance 其他 2015-01-01 Wu, Weikang; An, Xia; Tan, Fei; Chen, Yehua; Liu, Jingjing; Zhang, Yao; Zhang, Xing; Shen, Dongjun; Guo, Gang; Huang, Ru 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/04 current mirrors  heavy ions  damage  mismatch  output impedance  single event  PDSOI  MOSFETS  VARIABILITY  MICRODOSE  CIRCUITS  DEVICES  DESIGN   Total ionizing dose (TID) effect and single event effect (SEE) in quasi-SOI nMOSFETs 期刊论文 semiconductor science and technology, 2014 Tan, Fei; Huang, Ru; An, Xia; Wu, Weikang; Feng, Hui; Huang, Liangxi; Fan, Jiewen; Zhang, Xing; Wang, Yangyuan 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13 quasi-SOI device  single event effect (SEE)  total ionizing dose (TID)  worst case  TECHNOLOGIES  TRANSISTOR  CANDIDATE  MOSFET  UPSET   Investigation on TID tolerance of 65nm bulk silicon nMOSFETs 其他 2014-01-01 Chen, Yehua; An, Xia; Wu, Weikang; Yao, Zhibin; Zhang, Xing; Huang, Ru 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13