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浏览/检索结果: 共2条，第1-2条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A universal etching-free transfer of MoS2 films for applications in photodetectors 期刊论文 NANO RESEARCH, 2015 Ma, Donglin; Shi, Jianping; Ji, Qingqing; Chen, Ke; Yin, Jianbo; Lin, Yuanwei; Zhang, Yu; Liu, Mengxi; Feng, Qingliang; Song, Xiuju; Guo, Xuefeng; Zhang, Jin; Zhang, Yanfeng; Liu, Zhongfan 收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03 MoS2  etching-free  efficient transfer  ultrasonic bubbling  environmental friendliness  CHEMICAL-VAPOR-DEPOSITION  METAL DICHALCOGENIDE NANOSHEETS  HIGH-QUALITY MONOLAYER  MONO LAYER MOS2  LARGE-AREA  SINGLE-LAYER  ATOMIC LAYERS  MOLYBDENUM-DISULFIDE  ELECTRONIC-STRUCTURE  VALLEY POLARIZATION   Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation 期刊论文 NANO RESEARCH, 2015 Song, Xiuju; Gao, Junfeng; Nie, Yufeng; Gao, Teng; Sun, Jingyu; Ma, Donglin; Li, Qiucheng; Chen, Yubin; Jin, Chuanhong; Bachmatiuk, Alicja; Ruemmeli, Mark H.; Ding, Feng; Zhang, Yanfeng; Liu, Zhongfan 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 hexagonal boron nitride  Cu foil  domain size  orientation  chemical vapor deposition (CVD)  SCANNING-TUNNELING-MICROSCOPY  FIELD-EFFECT TRANSISTORS  SINGLE-CRYSTAL  GRAPHENE ELECTRONICS  GRAIN-BOUNDARIES  LAYER GRAPHENE  MONOLAYER  HETEROSTRUCTURES  FILMS  FOIL