A universal etching-free transfer of MoS2 films for applications in   photodetectors

doi:10.1007/s12274-015-0866-z

CORC > 北京大学 > 化学与分子工程学院

	A universal etching-free transfer of MoS2 films for applications in photodetectors
	Ma, Donglin ; Shi, Jianping ; Ji, Qingqing ; Chen, Ke ; Yin, Jianbo ; Lin, Yuanwei ; Zhang, Yu ; Liu, Mengxi ; Feng, Qingliang ; Song, Xiuju ; Guo, Xuefeng ; Zhang, Jin ; Zhang, Yanfeng ; Liu, Zhongfan
刊名	NANO RESEARCH
	2015
关键词	MoS2 etching-free efficient transfer ultrasonic bubbling environmental friendliness CHEMICAL-VAPOR-DEPOSITION METAL DICHALCOGENIDE NANOSHEETS HIGH-QUALITY MONOLAYER MONO LAYER MOS2 LARGE-AREA SINGLE-LAYER ATOMIC LAYERS MOLYBDENUM-DISULFIDE ELECTRONIC-STRUCTURE VALLEY POLARIZATION
DOI	10.1007/s12274-015-0866-z
英文摘要	Transferring MoS2 films from growth substrates onto target substrates is a critical issue for their practical applications. Moreover, it remains a great challenge to avoid sample degradation and substrate destruction, because the current transfer method inevitably employs a wet chemical etching process. We developed an etching-free transfer method for transferring MoS2 films onto arbitrary substrates by using ultrasonication. Briefly, the collapse of ultrasonication-generated microbubbles at the interface between polymer-coated MoS2 film and substrates induce sufficient force to delaminate the MoS2 films. Using this method, the MoS2 films can be transferred from all substrates (silica, mica, strontium titanate, and sapphire) and retains the original sample morphology and quality. This method guarantees a simple transfer process and allows the reuse of growth substrates, without involving any hazardous etchants. The etching-free transfer method is likely to promote broad applications of MoS2 in photodetectors.; supported by the National Natural Science Foundation of China,the National Basic Research Program of China,the Foundation for Innovative Research Groups of the National Natural Science Foundation of China; SCI(E); 中国科学引文数据库(CSCD); ARTICLE; yanfengzhang@pku.edu.cn; zfliu@pku.edu.cn; 11; 3662-3672; 8
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/449931]
专题	化学与分子工程学院工学院
推荐引用方式 GB/T 7714	Ma, Donglin,Shi, Jianping,Ji, Qingqing,et al. A universal etching-free transfer of MoS2 films for applications in photodetectors[J]. NANO RESEARCH,2015.
APA	Ma, Donglin.,Shi, Jianping.,Ji, Qingqing.,Chen, Ke.,Yin, Jianbo.,...&Liu, Zhongfan.(2015).A universal etching-free transfer of MoS2 films for applications in photodetectors.NANO RESEARCH.
MLA	Ma, Donglin,et al."A universal etching-free transfer of MoS2 films for applications in photodetectors".NANO RESEARCH (2015).