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Improvement of durability and switching speed by incorporating nanocrystals in the HfO based resistive random access memory devices 期刊论文
Applied Physics Letters, 2018, 卷号: Vol.113 No.2, 页码: 023105
作者:  Wu, Q.;  Banerjee, W.;  Jingchen Cao;  Zhuoyu Ji;  Ling Li
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