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	Improvement of durability and switching speed by incorporating nanocrystals in the HfO based resistive random access memory devices
	Wu, Q.; Banerjee, W.; Jingchen Cao; Zhuoyu Ji; Ling Li; Ming Liu
刊名	Applied Physics Letters
	2018
卷号	Vol.113 No.2页码:023105
ISSN号	0003-6951
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5461740
专题	湖南大学
推荐引用方式 GB/T 7714	Wu, Q.,Banerjee, W.,Jingchen Cao,et al. Improvement of durability and switching speed by incorporating nanocrystals in the HfO based resistive random access memory devices[J]. Applied Physics Letters,2018,Vol.113 No.2:023105.
APA	Wu, Q.,Banerjee, W.,Jingchen Cao,Zhuoyu Ji,Ling Li,&Ming Liu.(2018).Improvement of durability and switching speed by incorporating nanocrystals in the HfO based resistive random access memory devices.Applied Physics Letters,Vol.113 No.2,023105.
MLA	Wu, Q.,et al."Improvement of durability and switching speed by incorporating nanocrystals in the HfO based resistive random access memory devices".Applied Physics Letters Vol.113 No.2(2018):023105.

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