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科研机构
北京大学 [15]
武汉大学 [2]
西安交通大学 [1]
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其他 [18]
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2017 [1]
2016 [11]
2015 [2]
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Derivation of Pluripotent Stem Cells with In Vivo Embryonic and Extraembryonic Potency
其他
2017-01-01
Yang, Yang
;
Liu, Bei
;
Xu, Jun
;
Wang, Jinlin
;
Wu, Jun
;
Shi, Cheng
;
Xu, Yaxing
;
Dong, Jiebin
;
Wang, Chengyan
;
Lai, Weifeng
;
Zhu, Jialiang
;
Xiong, Liang
;
Zhu, Dicong
;
Li, Xiang
;
Yang, Weifeng
;
Yamauchi, Takayoshi
;
Sugawara, Atsushi
;
Li, Zhongwei
;
Sun, Fangyuan
;
Li, Xiangyun
;
Li, Chen
;
He, Aibin
;
Du, Yaqin
;
Wang, Ting
;
Zhao, Chaoran
;
Li, Haibo
;
Chi, Xiaochun
;
Zhang, Hongquan
;
Liu, Yifang
;
Li, Cheng
;
Duo, Shuguang
;
Yin, Ming
;
Shen, Huan
;
Belmonte, Juan Carlos Izpisua
;
Deng, Hongkui
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2017/12/03
LARGE GENE LISTS
MOUSE EMBRYOS
GROUND-STATE
ES CELLS
INTERSPECIES CHIMERAS
CULTURE-CONDITIONS
RAT BLASTOCYSTS
SEQUENCING DATA
RNA-SEQ
NAIVE
Simultaneous Reconstruction and Segmentation with the Mumford-Shah functional for Electron Tomography
其他
2016-01-01
Shen, Li
;
Quinto, Eric Todd
;
Wang, Shiqiang
;
Jiang, Ming
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2017/12/03
CONICAL TOMOGRAPHY
ESD Reliability Improvement of the 0.25-mu m 60-V Power nLDMOS with Discrete Embedded SCRs Separated by STI Structures
其他
2016-01-01
Chen, Shen-Li
;
Wu, Yi-Cih
;
Lin, Jia-Ming
;
Yang, Chih-Hung
;
Yen, Chih-Ying
;
Chen, Kuei-Jyun
;
Chen, Hung-Wei
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
Electrostatic discharge (ESD)
N-channel lateral-diffused MOSFET (nLDMOS)
Secondary breakdown current (I-t2)
Shallow-trench isolation (STI)
Silicon-controller rectifier (SCR)
ESD Reliability Evaluations of the 60-V nLDMOS by the Drain-side Discrete SCRs
其他
2016-01-01
Chen, Shen-Li
;
Chen, Kuei-Jyun
;
Wu, Yi-Cih
;
Lin, Jia-Ming
;
Yang, Chih-Hung
;
Yen, Chih-Ying
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
LDMOS
Design on ESD Robustness of Source-side Discrete Distribution in the 60-V High-Voltage nLDMOS Devices
其他
2016-01-01
Chen, Shen-Li
;
Yang, Chih-Hung
;
Yen, Chih-Ying
;
Chen, Kuei-Jyun
;
Wu, Yi-Cih
;
Lin, Jia-Ming
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
LDMOS
ESD reliability improvement of the 0.25-��m 60-V power nLDMOS with discrete embedded SCRs separated by STI structures
其他
2016-01-01
Chen, Shen-Li
;
Wu, Yi-Cih
;
Lin, Jia-Ming
;
Yang, Chih-Hung
;
Yen, Chih-Ying
;
Chen, Kuei-Jyun
;
Chen, Hung-Wei
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2017/12/03
ESD-reliability characterizations of a 45-V p-channel LDMOS-SCR with the discrete-cathode end
其他
2016-01-01
Chen, Shen-Li
;
Huang, Yu-Ting
;
Wu, Yi-Cih
;
Lin, Jia-Ming
;
Yang, Chih-Hung
;
Yen, Chih-Ying
;
Chen, Kuei-Jyun
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
Design on ESD robustness of source-side discrete distribution in the 60-V high-voltage nLDMOS devices
其他
2016-01-01
Chen, Shen-Li
;
Yang, Chih-Hung
;
Yen, Chih-Ying
;
Chen, Kuei-Jyun
;
Wu, Yi-Cih
;
Lin, Jia-Ming
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2017/12/03
ESD reliability evaluations of the 60-V nLDMOS by the drain-side discrete SCRs
其他
2016-01-01
Chen, Shen-Li
;
Chen, Kuei-Jyun
;
Wu, Yi-Cih
;
Lin, Jia-Ming
;
Yang, Chih-Hung
;
Yen, Chih-Ying
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2017/12/03
ESD-Reliability Characterizations of a 45-V p-Channel LDMOS-SCR with the Discrete-Cathode End
其他
2016-01-01
Chen, Shen-Li
;
Huang, Yu-Ting
;
Wu, Yi-Cih
;
Lin, Jia-Ming
;
Yang, Chih-Hung
;
Yen, Chih-Ying
;
Chen, Kuei-Jyun
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
P-type laterally-diffused metal oxide semiconductor (pLDMOS)
Electrostatic Discharge (ESD)
Holding voltage (V-h)
Secondary breakdown current (I-t2)
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