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Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy 期刊论文
nanoscale research letters, 2014, 卷号: 9, 页码: 470
Sang, L; Zhu, QS; Yang, SY; Liu, GP; Li, HJ; Wei, HY; Jiao, CM; Liu, SM; Wang, ZG; Zhou, XW; Mao, W; Hao, Y; Shen, B
收藏  |  浏览/下载:24/0  |  提交时间:2015/03/25
High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission 期刊论文
applied physics letters, 2014, 卷号: 105, 期号: 14, 页码: 141101
Wang, HL; Yu, HY; Zhou, XL; Kan, Q; Yuan, LJ; Chen, WX; Wang, W; Ding, Y; Pan, JQ
收藏  |  浏览/下载:19/0  |  提交时间:2015/03/20
Ultrabroad stimulated emission from quantum well laser 期刊论文
applied physics letters, 2014, 卷号: 104, 期号: 25, 页码: 251101
Wang, HL; Zhou, XL; Yu, HY; Mi, JP; Wang, JQ; Bian, J; Ding, Y; Chen, WX; Wang, W; Pan, JQ
收藏  |  浏览/下载:23/0  |  提交时间:2015/04/02
Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots 期刊论文
nanoscale research letters, 2012, 卷号: 7, 页码: 600
Zhang HY (Zhang, Hongyi); Chen YH (Chen, Yonghai); Zhou GY (Zhou, Guanyu); Tang CG (Tang, Chenguang); Wang ZG (Wang, Zhanguo)
收藏  |  浏览/下载:15/0  |  提交时间:2013/03/26
Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy 期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113
Jin, L; Zhou, HY; Qu, SC; Wang, ZG
收藏  |  浏览/下载:91/0  |  提交时间:2012/02/06
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载:55/5  |  提交时间:2011/07/05
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:  Xu B;  Jin P;  Ye XL
收藏  |  浏览/下载:65/1  |  提交时间:2011/07/05
Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.83501
作者:  Zhou GY;  Zhang HY;  Xu B;  Ye XL
收藏  |  浏览/下载:70/4  |  提交时间:2011/07/05
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 会议论文
16th international conference on crystal growth (iccg16)/14th international conference on vapor growth and epitaxy (icvge14), beijing, peoples r china, aug 08-13, 2010
阎Zhou HY (Zhou Huiying); Qu SC (Qu Shengchun); Jin P (Jin Peng); Xu B (Xu Bo); Ye XL (Ye Xiaoling); Liu JP (Liu Junpeng); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载:47/0  |  提交时间:2011/07/26
Optical properties of Mn+ doped GaAs 期刊论文
optoelectronics and advanced materials-rapid communications, 2010, 卷号: 4, 期号: 6, 页码: 784-787
Zhou HY (Zhou Huiying); Qu SC (Qu Shengchun); Liao SZ (Liao Shuzhi); Zhang FS (Zhang Fasheng); Liu JP (Liu Junpeng); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载:178/22  |  提交时间:2010/08/17


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