QQ客服 官方微博 反馈留言

浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High efficiency, single-lobe surface-emitting DFB/DBR quantum cascade lasers. 期刊论文 opt express, 2016, 卷号: 24, 期号: 17, 页码: 19545-19551 Ying-hui Liu; Jin-chuan Zhang; Fang-liang Yan; Zhi-wei Jia; Feng-qi Liu; Ping Liang; Ning Zhuo; Shen-qiang Zhai; Li-jun Wang; Jun-qi Liu; Shu-man Liu; Zhan-guo Wang 收藏  |  浏览/下载：26/0  |  提交时间：2017/03/10 Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN_AlN_GaN heterostructure field-effect transistors 期刊论文 chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102 Cao Zhi-Fang , Lin Zhao-Jun, Lü Yuan-Jie, Luan Chong-Biao and Wang Zhan-Guo 收藏  |  浏览/下载：29/0  |  提交时间：2014/03/18 Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102 Cao Zhi-Fang; Lin Zhao-Jun; Lu Yuan-Jie; Luan Chong-Biao; Wang Zhan-Guo 收藏  |  浏览/下载：30/0  |  提交时间：2013/09/17 Surface emitting quantum cascade lasers operating in continuous-wave mode above 70 °C at λ~ 4.6 μm 期刊论文 Applied Physics Letters, 2013, 卷号: 103, 期号: 4, 页码: 041121 - 041121-4 Yao, Dan-Yang; Zhang, Jin-Chuan; Liu, Feng-Qi; Zhuo, Ning; Yan, Fang-Liang; Wang, Li-Jun; Liu, Jun-Qi; Wang, Zhan-Guo 收藏  |  浏览/下载：22/0  |  提交时间：2014/02/12 Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers 期刊论文 chinese physics letters, 2013, 卷号: 30, 期号: 9, 页码: 096105 DONG Lin, SUN Guo-Sheng, YU Jun, ZHENG Liu, LIU Xing-Fang, ZHANG Feng, YAN Guo-Guo, LI Xi-Guang, WANG Zhan-Guo, YANG Fei 收藏  |  浏览/下载：24/0  |  提交时间：2014/03/17 High-Power Distributed Feedback Terahertz Quantum Cascade Lasers 期刊论文 ieee electron device letters, 2013, 卷号: 34, 期号: 11, 页码: 1412 - 1414 Tao Wang, Jun-Qi Liu, Yan-Fang Li, Jian-Yan Chen, Feng-Qi Liu, Li-Jun Wang, Jin-Chuan Zhang, and Zhan-Guo Wang 收藏  |  浏览/下载：10/0  |  提交时间：2014/02/12 A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics 期刊论文 chinese physics b, 2012, 卷号: 21, 期号: 9, 页码: 097104 Lu YJ (Lu Yuan-Jie); Lin ZJ (Lin Zhao-Jun); Yu YX (Yu Ying-Xia); Meng LG (Meng Ling-Guo); Cao ZF (Cao Zhi-Fang); Luan CB (Luan Chong-Biao); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：17/0  |  提交时间：2013/04/02 A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics 期刊论文 chinese physics b, 2012, 卷号: 21, 期号: 9, 页码: 16741056 Lü, Yuan-Jie; Lin, Zhao-Jun; Yu, Ying-Xia; Meng, Ling-Guo; Cao, Zhi-Fang; Luan, Chong-Biao; Wang, Zhan-Guo 收藏  |  浏览/下载：18/0  |  提交时间：2013/05/07