A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics

	A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics
	Lu YJ (Lu Yuan-Jie) ; Lin ZJ (Lin Zhao-Jun) ; Yu YX (Yu Ying-Xia) ; Meng LG (Meng Ling-Guo) ; Cao ZF (Cao Zhi-Fang) ; Luan CB (Luan Chong-Biao) ; Wang ZG (Wang Zhan-Guo)
刊名	chinese physics b
	2012
卷号	21 期号:9 页码:097104
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2013-04-02
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23830]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Lu YJ ,Lin ZJ ,Yu YX ,et al. A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics[J]. chinese physics b,2012,21(9):097104.
APA	Lu YJ .,Lin ZJ .,Yu YX .,Meng LG .,Cao ZF .,...&Wang ZG .(2012).A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics.chinese physics b,21(9),097104.
MLA	Lu YJ ,et al."A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics".chinese physics b 21.9(2012):097104.