CORC

浏览/检索结果: 共14条,第1-10条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy 期刊论文
Scientific Reports, 2017, 卷号: 7, 页码: 46420
作者:  Dingyu Ma;  Xin Rong;  Xiantong Zheng;  Weiying Wang;  Ping Wang
收藏  |  浏览/下载:27/0  |  提交时间:2018/05/23
Optimization of growth and fabrication techniques to enhance the InGaN/GaN multiple quantum well solar cells performance 期刊论文
Superlattices and Microstructures, 2017, 卷号: 109, 页码: 194-200
作者:  Shiming Liu;  Quan Wang;  Hongling Xiao;  Kun Wang;  Cuimei Wang
收藏  |  浏览/下载:34/0  |  提交时间:2018/05/23
High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure 期刊论文
adv mater, 2016, 卷号: 28, 期号: 36, 页码: 7978-7983
Xin Rong; Xinqiang Wang; Sergey V. Ivanov; Xinhe Jiang; Guang Chen; Ping Wang; Weiying Wang; Chenguang He; Tao Wang; Tobias Schulz; Martin Albrecht; Valentin N. Jmerik; Alexey A. Toropov; Viacheslav V. Ratnikov; Vladimir I. Kozlovsky; Victor P. Martovitsky; Peng Jin; Fujun Xu; Xuelin Yang; Zhixin Qin; Weikun Ge; Junjie Shi; and Bo Shen
收藏  |  浏览/下载:74/0  |  提交时间:2017/03/10
Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells 期刊论文
scientific reports, 2015, 卷号: 5, 页码: 14386
X. Rong; X. Q. Wang; G. Chen; X. T. Zheng; P. Wang; F. J. Xu; Z. X. Qin; N. Tang; Y. H. Chen; L. W. Sang; M. Sumiya; W. K. Ge; B. Shen
收藏  |  浏览/下载:30/0  |  提交时间:2016/03/18
Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures 期刊论文
scientific reports, 2014, 卷号: 4, 页码: 6521
Wang, JM; Xu, FJ; Zhang, X; An, W; Li, XZ; Song, J; Ge, WK; Tian, GS; Lu, J; Wang, XQ; Tang, N; Yang, ZJ; Li, W; Wang, WY; Jin, P; Chen, YH; Shen, B
收藏  |  浏览/下载:22/0  |  提交时间:2015/03/20
Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells 期刊论文
applied physics letters, 2013, 卷号: 102, 期号: 19, 页码: 192109 - 192109-5
G. Chen, Z. L. Li, X. Q. Wang, C. C. Huang, X. Rong, L. W. Sang, F. J. Xu, N. Tang, Z. X. Qin, M. Sumiya, Y. H. Chen, W. K. Ge, B. Shen
收藏  |  浏览/下载:14/0  |  提交时间:2014/02/12
Strong circular photogalvanic effect in ZnO epitaxial films 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 4, 页码: art. no. 041907
Zhang Q (Zhang Q.); Wang XQ (Wang X. Q.); Yin CM (Yin C. M.); Xu FJ (Xu F. J.); Tang N (Tang N.); Shen B (Shen B.); Chen YH (Chen Y. H.); Chang K (Chang K.); Ge WK (Ge W. K.); Ishitani Y (Ishitani Y.); Yoshikawa A (Yoshikawa A.)
收藏  |  浏览/下载:279/88  |  提交时间:2010/09/07
Optical properties of phase-separated GaN1-xPx alloys grown by light-radiation heating metal-organic chemical vapour deposition 期刊论文
chinese physics letters, 2005, 卷号: 22, 期号: 8, 页码: 2081-2083
Lu LW; Chen TJ; Shen B; Wang JN; Ge WK
收藏  |  浏览/下载:67/32  |  提交时间:2010/03/17
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 期刊论文
materials science in semiconductor processing, 2003, 卷号: 6, 期号: 5-6, 页码: 523-525
Leung, BH; Fong, WK; Surya, C; Lu, LW; Ge, WK
收藏  |  浏览/下载:343/96  |  提交时间:2010/03/09
GaN  
Growth temperature effect on the optical and material properties of AlxInyGa1-x-yN epilayers grown by MOCVD 期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 84-90
作者:  Li DB
收藏  |  浏览/下载:57/0  |  提交时间:2010/08/12


©版权所有 ©2017 CSpace - Powered by CSpace