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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 STUDY OF MICROSTRUCTURE AND DEFECTS IN HYDROGENATED MICROCRYSTALLINE SILICON FILMS 会议论文 34th ieee photovoltaic specialists conference, philadelphia, pa, 2009 Peng WB (Peng Wenbo); Zeng XB (Zeng Xiangbo); Liu SY (Liu Shiyong); Xiao HB (Xiao Haibo); Kong GL (Kong Guanglin); Yu YD (Yu Yude); Liao XB (Liao Xianbo) 收藏  |  浏览/下载：253/64  |  提交时间：2010/08/16 Dependence of transport properties in tunnel junction on boron doping 会议论文 23rd international conference on amorphous and nanocrystalline semiconductors (icans23), utrecht, netherlands, aug 23-28, 2009 Shi MJ; Zeng XB; Liu SY; Peng WB; Xiao HB; Liao XB; Wang ZG; Kong GL 收藏  |  浏览/下载：43/2  |  提交时间：2011/07/15 Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate 期刊论文 ieee electron device letters, 2010, 卷号: 31, 期号: 10, 页码: 1101-1103 Yang ZC (Yang Z. C.); Huang AP (Huang A. P.); Zheng XH (Zheng X. H.); Xiao ZS (Xiao Z. S.); Liu XY (Liu X. Y.); Zhang XW (Zhang X. W.); Chu PK (Chu Paul K.); Wang WW (Wang W. W.) 收藏  |  浏览/下载：63/0  |  提交时间：2010/11/14 Electron state density  Fermi-level pinning (FLP)  MIS structures  work function (WF)  WORK FUNCTION   Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks 期刊论文 applied physics letters, 2010, 卷号: 97, 期号: 13, 页码: art. no. 132908 Zheng XH (Zheng X. H.); Huang AP (Huang A. P.); Xiao ZS (Xiao Z. S.); Yang ZC (Yang Z. C.); Wang M (Wang M.); Zhang XW (Zhang X. W.); Wang WW (Wang W. W.); Chu PK (Chu Paul K.) 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/14 OXYGEN  GATE  DIFFUSION  FILMS   Gap states and microstructure of microcrystalline silicon thin films 期刊论文 acta physica sinica, 2009, 卷号: 58, 期号: 8, 页码: 5716-5720 Peng WB; Liu SY; Xiao HB; Zhang CS; Shi MJ; Zeng XB; Xu YY; Kong GL; Yu YD 收藏  |  浏览/下载：87/3  |  提交时间：2010/03/08 gap states  grain boundary  microcrystalline silicon  modulated photocurrent   AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 作者:  Hou QF;  Zhang ML 收藏  |  浏览/下载：52/0  |  提交时间：2010/03/09 ALGAN/GAN HEMTS   Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor 会议论文 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 Yin, HB; Wang, XL; Hu, GX; Ran, JX; Xiao, HL; Li, JM 收藏  |  浏览/下载：42/0  |  提交时间：2010/03/09