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	Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor
	Yin, HB ; Wang, XL ; Hu, GX ; Ran, JX ; Xiao, HL ; Li, JM
	2008
会议名称	9th international conference on solid-state and integrated-circuit technology
会议日期	oct 20-23, 2008
会议地点	beijing, peoples r china
页码	vols 1-4: 710-713
通讯作者	yin, hb, chinese acad sci, inst semicond, ctr mat sci, pob 912, beijing 100083, peoples r china.
中文摘要	a detailed reaction-tran sport model was studied in a showerhead reactor for metal organic chemical vapor deposition of gan film by using computational fluid dynamics simulation. it was found that flat flow lines without swirl are crucial to improve the uniformity of the film growth, and thin temperature gradient above the suscptor can increase the film deposition rate. by above-mentioned research, we can employ higher h (the distance from the susceptor to the inlet), p (operational pressure) and the rate of susceptor rotation to improve the film growth.
英文摘要	a detailed reaction-tran sport model was studied in a showerhead reactor for metal organic chemical vapor deposition of gan film by using computational fluid dynamics simulation. it was found that flat flow lines without swirl are crucial to improve the uniformity of the film growth, and thin temperature gradient above the suscptor can increase the film deposition rate. by above-mentioned research, we can employ higher h (the distance from the susceptor to the inlet), p (operational pressure) and the rate of susceptor rotation to improve the film growth.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t07:08:14z (gmt). no. of bitstreams: 1 276.pdf: 3477342 bytes, checksum: ab14f0c641449c009b45d3b6ad074533 (md5) previous issue date: 2008; ieee beijing sect.; chinese inst elect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee solid state circuits soc.; ieee circuites & syst soc.; ieee hong kong eds, sscs chapter.; ieee sscs beijing chapter.; japan soc appl phys.; elect div ieee.; ursi commiss d.; inst elect engineers korea.; assoc asia pacific phys soc.; peking univ, ieee eds student chapter.; [yin, haibo] chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	ieee beijing sect.; chinese inst elect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee solid state circuits soc.; ieee circuites & syst soc.; ieee hong kong eds, sscs chapter.; ieee sscs beijing chapter.; japan soc appl phys.; elect div ieee.; ursi commiss d.; inst elect engineers korea.; assoc asia pacific phys soc.; peking univ, ieee eds student chapter.
会议录	2008 9th international conference on solid-state and integrated-circuit technology
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	半导体材料
语种	英语
ISBN号	978-1-4244-2185-5
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/8278]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yin, HB,Wang, XL,Hu, GX,et al. Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor[C]. 见:9th international conference on solid-state and integrated-circuit technology. beijing, peoples r china. oct 20-23, 2008.

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