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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 会议论文 16th international conference on crystal growth (iccg16)/14th international conference on vapor growth and epitaxy (icvge14), beijing, peoples r china, aug 08-13, 2010 阎Zhou HY (Zhou Huiying); Qu SC (Qu Shengchun); Jin P (Jin Peng); Xu B (Xu Bo); Ye XL (Ye Xiaoling); Liu JP (Liu Junpeng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：47/0  |  提交时间：2011/07/26 Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures 会议论文 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 作者:  Ye XL;  Jin P;  Xu B 收藏  |  浏览/下载：120/42  |  提交时间：2010/03/29 lateral intersubband photocurrent   Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy 会议论文 10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：15/0  |  提交时间：2010/10/29 SHORT-PERIOD SUPERLATTICES  RAMAN-SCATTERING  QUANTUM-WELLS  GROWTH  ROUGHNESS  SEGREGATION  ALAS/GAAS  ALAS  GAAS   Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices 会议论文 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 作者:  Xu B;  Ye XL;  Jin P 收藏  |  浏览/下载：93/22  |  提交时间：2010/03/29 DOTS   Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing 会议论文 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 作者:  Xu B 收藏  |  浏览/下载：83/12  |  提交时间：2010/03/29 1.3 MU-M   Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry 会议论文 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 作者:   收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 reflectance-difference spectroscopy  indium segregation  InGaAs/GaAs quantum wells  EPITAXY-GROWN INGAAS/GAAS  SURFACE SEGREGATION  INTERFACE   Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 会议论文 50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999 作者:   收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 quantum dots  high index  molecular beam epitaxy  photoluminescence  SURFACE SEGREGATION  ORIENTED GAAS  INGAAS  ISLANDS  WELLS  DISKS   Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文 50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999 作者:   收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15 self-assembled quantum dots  InP substrate  high index  In(Ga,Al)As/InAlAs/InP  MBE  MOLECULAR-BEAM-EPITAXY  VAPOR-PHASE EPITAXY  GAAS  ISLANDS  PHOTOLUMINESCENCE  INP(001)  GROWTH  LASERS