Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy

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	Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
	Ye XL; Xu B
	2004
会议名称	10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10)
会议日期	sep 29-oct 02, 2003
会议地点	batz sur mer, france
关键词	SHORT-PERIOD SUPERLATTICES RAMAN-SCATTERING QUANTUM-WELLS GROWTH ROUGHNESS SEGREGATION ALAS/GAAS ALAS GAAS
页码	297-300
通讯作者	ye xl chinese acad sci inst semicond key lab semicond mat sci pob 912 beijing 100083 peoples r china. 电子邮箱地址: xlye@red.semi.ac.cn
中文摘要	the in-plane optical anisotropy of several gaas/algaas quantum well samples with different well widths has been measured at room temperature by reflectance-difference spectroscopy (rds). the rds line shapes are found to be similar in all the samples examined here, which dominantly consist of two peak-like signals corresponding to 1hh-->1e and 1lh-->1e transition. as the well width is decreased, or the 1 ml inas layer is inserted at one interface, the intensity of the anisotropy increases quickly. our detail analysis shows that the anisotropy mainly arises from the anisotropic interface roughness. the results demonstrate that the rds technique is sensitive to the interface structures.
英文摘要	the in-plane optical anisotropy of several gaas/algaas quantum well samples with different well widths has been measured at room temperature by reflectance-difference spectroscopy (rds). the rds line shapes are found to be similar in all the samples examined here, which dominantly consist of two peak-like signals corresponding to 1hh-->1e and 1lh-->1e transition. as the well width is decreased, or the 1 ml inas layer is inserted at one interface, the intensity of the anisotropy increases quickly. our detail analysis shows that the anisotropy mainly arises from the anisotropic interface roughness. the results demonstrate that the rds technique is sensitive to the interface structures.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:21z (gmt). no. of bitstreams: 1 2778.pdf: 217022 bytes, checksum: 8ad662b70b390732c0c4ad1e8cca01a2 (md5) previous issue date: 2004; chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
收录类别	CPCI-S
会议录	european physical journal-applied physics, 27 (1-3)
会议录出版者	e d p sciences ; 17, ave du hoggar, pa courtaboeuf, bp 112, f-91944 les ulis cedex a, france
会议录出版地	17, ave du hoggar, pa courtaboeuf, bp 112, f-91944 les ulis cedex a, france
学科主题	半导体材料
语种	英语
ISSN号	1286-0042
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13589]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ye XL,Xu B. Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy[C]. 见:10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10). batz sur mer, france. sep 29-oct 02, 2003.