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| Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文 Scientific Reports, 2017, 卷号: 7, 页码: 44850 作者: J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu 收藏  |  浏览/下载:24/0  |  提交时间:2018/11/30 |
| Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3 期刊论文 Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 35-39 作者: J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu 收藏  |  浏览/下载:21/0  |  提交时间:2018/11/30 |
| Different annealing temperature suitable for different Mg doped P-GaN 期刊论文 Superlattices and Microstructures, 2017, 卷号: 104, 期号: 2017, 页码: 63-68 作者: S.T. Liu; J. Yang; D.G. Zhao; D.S. Jiang; F. Liang 收藏  |  浏览/下载:32/0  |  提交时间:2018/07/11 |
| Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文 AIP Advances, 2017, 卷号: 7, 页码: 035103 作者: P. Chen; D. G. Zhao; D. S. Jiang; H. Long; M. Li 收藏  |  浏览/下载:28/0  |  提交时间:2018/07/11 |
| XPS study of impurities in Si-doped AlN film 期刊论文 surface and interface analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309 F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载:31/0  |  提交时间:2017/03/10 |
| The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文 aip advances, 2016, 卷号: 6, 页码: 035124 P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载:26/0  |  提交时间:2017/03/10 |
| Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文 applied physics a, 2016, 卷号: 122, 期号: 9 F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载:16/0  |  提交时间:2017/03/10 |
| The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content 期刊论文 physica status solidi (a), 2016, 卷号: 213, 期号: 8, 页码: 2223–2228 X. Li; D. G. Zhao*; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; F. Liang; L. Q. Zhang; J. P. Liu; H. Yang 收藏  |  浏览/下载:15/0  |  提交时间:2017/03/10 |
| Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes 期刊论文 journal of vacuum science & technology b, 2016, 卷号: 34, 期号: 1, 页码: 011206 J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; L. Q. Zhang; H. Yang 收藏  |  浏览/下载:21/0  |  提交时间:2017/03/10 |
| GaN high electron mobility transistors with AlInN back barriers 期刊论文 journal of alloys and compounds, 2016, 卷号: 662, 页码: 16-19 X.G. He; D.G. Zhao; D.S. Jiang; J.J. Zhu; P. Chen; Z.S. Liu; L.C. Le; J. Yang; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang 收藏  |  浏览/下载:13/0  |  提交时间:2017/03/10 |