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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A 630dpi dynamic LED display array in standard Si-based CMOS technology 期刊论文 science china-information sciences, 2012, 卷号: 55, 期号: 10, 页码: 2409-2416 Dong Z (Dong Zan); Wang W (Wang Wei); Huang BJ (Huang BeiJu); Zhang X (Zhang Xu); Guan N (Guan Ning); Chen HD (Chen HongDa) 收藏  |  浏览/下载：16/0  |  提交时间：2013/03/27 Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications 会议论文 6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006 Sun, G (Sun, Guosheng); Ning, J (Ning, Jin); Liu, X (Liu, Xingfang); Zhao, Y (Zhao, Yongmei); Li, J (Li, Jiaye); Wang, L (Wang, Lei); Zhao, W (Zhao, Wanshun); Wang, L (Wang, Liang) 收藏  |  浏览/下载：90/29  |  提交时间：2010/03/29 polycrystalline 3C-SiC  resonator  doping  SILICON-CARBIDE   Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy 期刊论文 spectroscopy and spectral analysis, 2006, 卷号: 26, 期号: 7, 页码: 1185-1189 Zhao L (Zhao Lei); Chen YH (Chen Yong-hai); Zuo YH (Zuo Yu-hua); Wang HN (Wang Hai-ning); Shi WH (Shi Wen-hua) 收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11 reflectance difference spectroscopy  semiconductor  in-plane optical anisotropy  electrooptic modification  SURFACE  INTERFACE  GROWTH   The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy 期刊论文 journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 3, 页码: 191-193 Wang HL; Zhu HJ; Ning D; Wang H; Wang XD; Guo ZS; Feng SL 收藏  |  浏览/下载：86/0  |  提交时间：2010/08/12 atomic hydrogen-assisted molecular beam epitaxy  deep level transient spectroscopy  deep level defects  DISLOCATION DENSITY  IRRADIATION   The effect of dopant Si on the uniformity of self-organized InAs quantum dots 期刊论文 journal of infrared and millimeter waves, 1999, 卷号: 18, 期号: 6, 页码: 423-426 Wang HL; Zhu HJ; Li Q; Ning D; Wang H; Wang XD; Deng YM; Feng SL 收藏  |  浏览/下载：38/0  |  提交时间：2010/08/12 self-organized quantum dots  PL  Si-doping  InAs/GaAs