The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy
	Wang HL ; Zhu HJ ; Ning D ; Wang H ; Wang XD ; Guo ZS ; Feng SL
刊名	journal of infrared and millimeter waves
	2000
卷号	19 期号:3 页码:191-193
关键词	atomic hydrogen-assisted molecular beam epitaxy deep level transient spectroscopy deep level defects DISLOCATION DENSITY IRRADIATION
ISSN号	1001-9014
通讯作者	ning d,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china.
中文摘要	the electrical activity of defects in gaas grown on gaas substrates doped with si and be by both conventional molecular beam epitaxy (mbe) and atomic hydrogen-assisted mbe (h-mbe) were characterized by deep level transient spectroscopy. the trap densities are significantly reduced in the homoepitaxial gaas grown by h-mbe compared to that grown by mbe. the reduction of trap densities is attributed to in situ passivation of these defects by atomic h during the growth. the improvement characteristics of gaas materials will be significance for fabrication of semiconductor devices.
学科主题	光电子学
收录类别	SCI
语种	中文
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12538]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang HL,Zhu HJ,Ning D,et al. The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy[J]. journal of infrared and millimeter waves,2000,19(3):191-193.
APA	Wang HL.,Zhu HJ.,Ning D.,Wang H.,Wang XD.,...&Feng SL.(2000).The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy.journal of infrared and millimeter waves,19(3),191-193.
MLA	Wang HL,et al."The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy".journal of infrared and millimeter waves 19.3(2000):191-193.