×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
新疆理化技术研究所 [7]
内容类型
期刊论文 [7]
发表日期
2020 [7]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共7条,第1-7条
帮助
限定条件
发表日期:2020
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Degradation characteristics of electron and proton irradiated InGaAsP/InGaAs dual junction solar cell
期刊论文
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2020, 卷号: 206, 期号: 3, 页码: 1-7
作者:
Zhao, XF (Zhao, X. F.)[ 1 ]
;
Aierken, A (Aierken, A.)[ 1,2 ]
;
Heini, M (Heini, M.)[ 1,3 ]
;
Tan, M (Tan, M.)[ 4 ]
;
Wu, YY (Wu, Y. Y.)[ 4 ]
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2020/04/21
InGaAsP/InGaAs solar cell
Electron and proton irradiation
Degradation
Equivalent displacement damage dose model
A study of hot pixels induced by proton and neutron irradiations in charge coupled devices
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 540-550
作者:
Liu, BK (Liu, Bingkai)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2020/07/06
Charge coupled devices (CCDs)
proton irradiation
neutron irradiation
hot pixels
displacement damage effects
Single-Event Effects in Pinned Photodiode CMOS Image Sensors: SET and SEL
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 8, 页码: 1861-1868
作者:
Cai, YL (Cai, Yulong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 3 ]
;
Li, YD (Li, Yudong)[ 3 ]
;
Guo, Q (Guo, Qi)[ 3 ]
;
Zhou, D (Zhou, Dong)[ 3 ]
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2020/09/09
Complementary metal-oxide-semiconductor
(CMOS) image sensors (CIS)
heavy ions
pulsed laser
single-event latchup (SEL)
single-event transient (SET)
Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors
期刊论文
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2020, 卷号: 57, 期号: 9, 页码: 1015-1021
作者:
Zhang, X (Zhang, Xiang)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2020/12/09
14-MeV neutron
neutron irradiation
radiation damage
radiation effect
Optoelectronic Performance Analysis of Low-Energy Proton Irradiation and Post-Thermal Annealing Effects on InGaAs Solar Cell
期刊论文
FRONTIERS IN PHYSICS, 2020, 卷号: 8, 期号: 11, 页码: 1-7
作者:
Zhuang, Y (Zhuang, Y.)[ 1 ]
;
Aierken, A (Aierken, A.)[ 1 ]
;
Lei, QQ (Lei, Q. Q.)[ 2,3 ]
;
Fang, L (Fang, L.)[ 4 ]
;
Shen, XB (Shen, X. B.)[ 2,3 ]
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2021/01/05
InGaAs solar cell
proton irradiation
displacement damage
degradation
annealing
Investigation of displacement damage to vertical-cavity surface-emitting red lasers due to 1 MeV electron radiation
期刊论文
AIP ADVANCES, 2020, 卷号: 10, 期号: 11, 页码: 1-6
作者:
Chen, JW (Chen, J. W.)[ 1,2 ]
;
Li, YD (Li, Y. D.)[ 1 ]
;
Heini, M (Heini, M.)[ 1 ]
;
Liu, BK (Liu, B. K.)[ 1,2 ]
;
Lei, QQ (Lei, Q. Q.)[ 1,2 ]
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2021/01/05
Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors
期刊论文
RESULTS IN PHYSICS, 2020, 卷号: 19, 期号: 12, 页码: 1-7
作者:
Liu, BK (Liu, Bingkai)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2021/03/19
Backside illuminated CMOS image sensor
Random telegraph signal
Radiation effects
Proton irradiation
Theoretical calculation
©版权所有 ©2017 CSpace - Powered by
CSpace