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| Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文 Scientific Reports, 2017, 卷号: 7, 页码: 44850 作者: J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu 收藏  |  浏览/下载:23/0  |  提交时间:2018/11/30 |
| Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region 期刊论文 OPTICS EXPRESS, 2017, 卷号: 25, 期号: 9, 页码: 9595-9602 作者: J. YANG; D. G. ZHAO; D. S. JIANG; X. LI; F. LIANG 收藏  |  浏览/下载:25/0  |  提交时间:2018/11/30 |
| Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3 期刊论文 Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 35-39 作者: J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu 收藏  |  浏览/下载:19/0  |  提交时间:2018/11/30 |
| Bias Dependence of the Electrical Spin Injection into GaAs from Co-Fe-B=MgO Injectors with Different MgO Growth Processes 期刊论文 PHYSICAL REVIEW APPLIED, 2017, 卷号: 8, 页码: 054027 作者: P. Barate; S. H. Liang; T. T. Zhang; J. Frougier; B. Xu 收藏  |  浏览/下载:21/0  |  提交时间:2018/05/30 |
| A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition 期刊论文 ECS Journal of Solid State Science and Technology, 2017, 卷号: 6, 期号: 1, 页码: 27-31 作者: X. F. Liu; z G. G. Yan; Z. W. Shen; Z. X.Wen; L. X. Tian 收藏  |  浏览/下载:32/0  |  提交时间:2018/06/15 |
| Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文 Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466 作者: X. LI; Z. S. LIU; D. G. ZHAO; D. S. JIANG; P. CHEN 收藏  |  浏览/下载:20/0  |  提交时间:2018/07/11 |
| Different annealing temperature suitable for different Mg doped P-GaN 期刊论文 Superlattices and Microstructures, 2017, 卷号: 104, 期号: 2017, 页码: 63-68 作者: S.T. Liu; J. Yang; D.G. Zhao; D.S. Jiang; F. Liang 收藏  |  浏览/下载:29/0  |  提交时间:2018/07/11 |
| Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文 AIP Advances, 2017, 卷号: 7, 页码: 035103 作者: P. Chen; D. G. Zhao; D. S. Jiang; H. Long; M. Li 收藏  |  浏览/下载:26/0  |  提交时间:2018/07/11 |