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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 发表日期：2016     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation 期刊论文 SCIENTIFIC REPORTS, 2016 Yu, Muxi; Cai, Yimao; Wang, Zongwei; Fang, Yichen; Liu, Yefan; Yu, Zhizhen; Pan, Yue; Zhang, Zhenxing; Tan, Jing; Yang, Xue; Li, Ming; Huang, Ru 收藏  |  浏览/下载：7/0  |  提交时间：2017/12/03 NONVOLATILE MEMORY TECHNOLOGIES  THERMAL-OXIDATION  RESISTIVE MEMORY  EDGE ELECTRODES  THIN-FILMS  RESISTANCE  DEVICE  BEHAVIORS  FILAMENT  OXYGEN   Encapsulation layer design and scalability in encapsulated vertical 3D RRAM 期刊论文 NANOTECHNOLOGY, 2016 Yu, Muxi; Fang, Yichen; Wang, Zongwei; Chen, Gong; Pan, Yue; Yang, Xue; Yin, Minghui; Yang, Yuchao; Li, Ming; Cai, Yimao; Huang, Ru 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 3D RRAM  encapsulation layer  reliability  thermal disturbance  scalability  RANDOM-ACCESS MEMORY  THERMAL-OXIDATION  CROSSBAR ARRAY  FILMS  RESISTANCE  NITRIDE  DEVICES   Microscopic origin of read current noise in TaOx-based resistive switching memory by ultra-low temperature measurement 期刊论文 APPLIED PHYSICS LETTERS, 2016 Pan, Yue; Cai, Yimao; Liu, Yefan; Fang, Yichen; Yu, Muxi; Tan, Shenghu; Huang, Ru 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 RANDOM TELEGRAPH NOISE  DEVICE  OXIDES  RRAM   Self-selection effects and modulation of TaOx resistive switching random access memory with bottom electrode of highly doped Si 期刊论文 JOURNAL OF APPLIED PHYSICS, 2016 Yu, Muxi; Fang, Yichen; Wang, Zongwei; Pan, Yue; Li, Ming; Cai, Yimao; Huang, Ru 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 BIPOLAR RRAM  DEVICE  BILAYER