Self-selection effects and modulation of TaOx resistive switching random   access memory with bottom electrode of highly doped Si

doi:10.1063/1.4951007

CORC > 北京大学 > 信息科学技术学院

	Self-selection effects and modulation of TaOx resistive switching random access memory with bottom electrode of highly doped Si
	Yu, Muxi ; Fang, Yichen ; Wang, Zongwei ; Pan, Yue ; Li, Ming ; Cai, Yimao ; Huang, Ru
刊名	JOURNAL OF APPLIED PHYSICS
	2016
关键词	BIPOLAR RRAM DEVICE BILAYER
DOI	10.1063/1.4951007
英文摘要	In this paper, we propose a TaOx resistive switching random access memory (RRAM) device with operation-polarity-dependent self-selection effect by introducing highly doped silicon (Si) electrode, which is promising for large-scale integration. It is observed that with highly doped Si as the bottom electrode (BE), the RRAM devices show non-linear (>10(3)) I-V characteristic during negative Forming/Set operation and linear behavior during positive Forming/Set operation. The underling mechanisms for the linear and non-linear behaviors at low resistance states of the proposed device are extensively investigated by varying operation modes, different metal electrodes, and Si doping type. Experimental data and theoretical analysis demonstrate that the operation-polarity-dependent self-selection effect in our devices originates from the Schottky barrier between the TaOx layer and the interfacial SiOx formed by reaction between highly doped Si BE and immigrated oxygen ions in the conductive filament area. Published by AIP Publishing.; National Natural Science Foundation of China [61421005, 61376087, 61574007]; National High Technology Research and Development Program of China [2011AA010401, 2011AA010402]; National Basic Research Program of China [2011CBA00601]; IPOC (BUPT); SCI(E); EI; ARTICLE; caiyimao@pku.edu.cn; 19; 119
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/437241]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yu, Muxi,Fang, Yichen,Wang, Zongwei,et al. Self-selection effects and modulation of TaOx resistive switching random access memory with bottom electrode of highly doped Si[J]. JOURNAL OF APPLIED PHYSICS,2016.
APA	Yu, Muxi.,Fang, Yichen.,Wang, Zongwei.,Pan, Yue.,Li, Ming.,...&Huang, Ru.(2016).Self-selection effects and modulation of TaOx resistive switching random access memory with bottom electrode of highly doped Si.JOURNAL OF APPLIED PHYSICS.
MLA	Yu, Muxi,et al."Self-selection effects and modulation of TaOx resistive switching random access memory with bottom electrode of highly doped Si".JOURNAL OF APPLIED PHYSICS (2016).