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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2015    内容类型：期刊论文    专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Finding a suitable separation condition for TLC/FTIR analysis by using multiple-narrow-band TLC technique 期刊论文 rsc advances, 2015 Jiang, Ye; Kang, Xiaoyan; Gao, Danqing; He, Anqi; Guo, Ran; Fan, Xiaokun; Zhai, Yanjun; Xia, Jinming; Xu, Yizhuang; Noda, Isao; Wu, Jinguang 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/10 THIN-LAYER-CHROMATOGRAPHY  INFRARED PHOTOACOUSTIC-SPECTROSCOPY  FOURIER-TRANSFORM SPECTROMETRY  FLUORIDE FINE PARTICLES  STATIONARY-PHASE  PLANAR CHROMATOGRAPHY   Multi-bit nonvolatile logic implemented with metal-oxide based resistive switching device 期刊论文 固体通讯, 2015 Gao, Bin; Chen, Bing; Zhang, Feifei; Huang, Peng; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng 收藏  |  浏览/下载：6/0  |  提交时间：2015/11/10 Hafnium oxide  Gd-doping  Resistive switching  Multi-bit nonvolatile logic  STORAGE  MEMORY   Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015 Wang, Yijiao; Al-Ameri, Talib; Wang, Xingsheng; Georgiev, Vihar P.; Towie, Ewan; Amoroso, Salvatore Maria; Brown, Andrew R.; Cheng, Binjie; Reid, David; Riddet, Craig; Shifren, Lucian; Sinha, Saurabh; Yeric, Greg; Aitken, Robert; Liu, Xiaoyan; Kang, Jinfeng; Asenov, Asen 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 CMOS  electrostatics  nanowire transistors (NWs)  performance  quantum effects  TCAD  STATISTICAL VARIABILITY  INVERSION-LAYERS  GATE  CMOS  GENERATION  ELECTRON  DENSITY  FINFETS  DEVICES  MOSFETS   3-D Resistive Memory Arrays: From Intrinsic Switching Behaviors to Optimization Guidelines 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015 Li, Haitong; Gao, Bin; Chen, Hong-Yu; Chen, Zhe; Huang, Peng; Liu, Rui; Zhao, Liang; Jiang, Zizhen; Liu, Lifeng; Liu, Xiaoyan; Yu, Shimeng; Kang, Jinfeng; Nishi, Yoshi; Wong, H.S. Philip 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 3-D array  optimization  reliability  resistive random access memory (RRAM)  variability  RANDOM-ACCESS MEMORY  METAL-OXIDE RRAM  DEVICES  MODEL  SIMULATION   Nonvolatile Logic and In Situ Data Transfer Demonstrated in Crossbar Resistive RAM Array 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2015 Li, Haitong; Chen, Zhe; Ma, Wenjia; Gao, Bin; Huang, Peng; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 Resistive random access memory (RRAM)  nonvolatile logic  communication  crossbar array  STATEFUL LOGIC  ATOMIC SWITCH  MEMORY  DEVICES   High-performance HfOx/AlOy-based resistive switching memory cross-point array fabricated by atomic layer deposition 期刊论文 nanoscale research letters, 2015 Chen, Zhe; Zhang, Feifei; Chen, Bing; Zheng, Yang; Gao, Bin; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 RRAM  Cross-point array  Atomic layer deposition (ALD)  METAL-OXIDE RRAM  PARAMETER VARIATION  OPERATION  DEVICE  RERAM  TEMPERATURE  RETENTION  MODEL