Nonvolatile Logic and In Situ Data Transfer Demonstrated in Crossbar   Resistive RAM Array

doi:10.1109/LED.2015.2481439

CORC > 北京大学 > 信息科学技术学院

	Nonvolatile Logic and In Situ Data Transfer Demonstrated in Crossbar Resistive RAM Array
	Li, Haitong ; Chen, Zhe ; Ma, Wenjia ; Gao, Bin ; Huang, Peng ; Liu, Lifeng ; Liu, Xiaoyan ; Kang, Jinfeng
刊名	IEEE ELECTRON DEVICE LETTERS
	2015
关键词	Resistive random access memory (RRAM) nonvolatile logic communication crossbar array STATEFUL LOGIC ATOMIC SWITCH MEMORY DEVICES
DOI	10.1109/LED.2015.2481439
英文摘要	For the first time, nonvolatile logic, memory, and communication are experimentally demonstrated all within a crossbar resistive random access memory (RRAM) array through the state interaction among RRAM cells. With all the array cells initialized to high resistance states, OR and NOT logic are measured as a proof of functional completeness for computation, with input and output data directly stored in the array. Following the same computation paradigm, in situ data transfer within the crossbar RRAM array is realized. The cell-to-cell communication is proved efficient by the measured resistance evolution of a row of RRAM cells during consecutive data transfer. Reliability characteristics, including endurance, retention, and disturbance are scrutinized for the robust computing systems.; 973 Program [2011CBA00600]; National Natural Science Foundation of China [61421005, 61334007, 61404006]; SCI(E); EI; ARTICLE; lihaitong@pku.edu.cn; 11; 1142-1145; 36
语种	中文
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/415377]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, Haitong,Chen, Zhe,Ma, Wenjia,et al. Nonvolatile Logic and In Situ Data Transfer Demonstrated in Crossbar Resistive RAM Array[J]. IEEE ELECTRON DEVICE LETTERS,2015.
APA	Li, Haitong.,Chen, Zhe.,Ma, Wenjia.,Gao, Bin.,Huang, Peng.,...&Kang, Jinfeng.(2015).Nonvolatile Logic and In Situ Data Transfer Demonstrated in Crossbar Resistive RAM Array.IEEE ELECTRON DEVICE LETTERS.
MLA	Li, Haitong,et al."Nonvolatile Logic and In Situ Data Transfer Demonstrated in Crossbar Resistive RAM Array".IEEE ELECTRON DEVICE LETTERS (2015).