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浏览/检索结果: 共22条，第1-10条 帮助 限定条件 发表日期：2013    专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 GENERALIZABILITY OF DELAY OF GRATIFICATION: DIMENSIONALITY AND FUNCTION 期刊论文 psychological reports, 2013 Liu, Xiaoyan; Wang, Lei; Jiang, Jing 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 SELF-CONTROL  FUTURE CONSEQUENCES  DISCOUNT RATES  PERSONALITY  WORK  PERFORMANCE  VALIDATION  CREATIVITY  INVENTORY  IMMEDIATE   Globally hyperbolic moment method for BTE including phonon scattering 其他 2013-01-01 Yao, Wenqi; Li, Ruo; Lu, Tiao; Liu, Xiaoyan; Du, Gang; Zhao, Kai 收藏  |  浏览/下载：6/0  |  提交时间：2015/11/13 Simulation Study of Quasi-Ballistic Transport in Asymmetric DG-MOSFET by Directly Solving Boltzmann Transport Equation 其他 2013-01-01 Liu, Gai; Du, Gang; Lu, Tiao; Liu, Xiaoyan; Zhang, Pingwen; Zhang, Xing 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/10 Boltzmann transport equation (BTE)  double-gate FETs  numerical simulation  quasi-ballistic transport  BACKSCATTERING COEFFICIENT EXTRACTION  NANOSCALE MOSFETS  POISSON SYSTEM  MONTE-CARLO  WENO-SOLVER  TRANSISTORS  MOBILITY  DEVICES  MODEL   Remote phonon and impurity screening effect of substrate and gate dielectric on electron dynamics in single layer MoS2 期刊论文 应用物理学快报, 2013 Zeng, Lang; Xin, Zheng; Chen, Shaowen; Du, Gang; Kang, Jinfeng; Liu, Xiaoyan 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 MONOLAYER MOS2  LARGE-AREA  MOBILITY  TRANSISTORS  INSULATOR  CRYSTALS  GROWTH   A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory 期刊论文 ieee电子器件汇刊, 2013 Gao, Bin; Chen, Bing; Zhang, Feifei; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng; Yu, Hongyu; Yu, Bin 收藏  |  浏览/下载：6/0  |  提交时间：2015/11/10 Multilevel  nonvolatile memory  oxygen vacancy  resistive random access memory (RRAM)  resistive switching  THIN-FILMS   Low rank approximation method for efficient Green's function calculation of dissipative quantum transport 期刊论文 应用物理杂志, 2013 Zeng, Lang; He, Yu; Povolotskyi, Michael; Liu, XiaoYan; Klimeck, Gerhard; Kubis, Tillmann 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10 SEMICONDUCTOR-DEVICES  CASCADE LASERS  GAIN   Metal-Gate/High-kappa/Ge nMOS at Small CET With Higher Mobility Than SiO2/Si at Wide Range Carrier Densities 期刊论文 ieee electron device letters, 2013 Liao, C. C.; Ku, T. C.; Lin, M. H.; Zeng, Lang; Kang, Jinfeng; Liu, Xiaoyan; Chin, Albert 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/12 Annealing  Ge  high-kappa  laser  YbGe  (111)   Comparison of band-to-band tunneling models in Si and Si - Ge junctions 期刊论文 journal of semiconductors, 2013 Jiao, Yipeng; Wei, Kangliang; Wang, Taihuan; Du, Gang; Liu, Xiaoyan 收藏  |  浏览/下载：1/0  |  提交时间：2015/11/17 3D MONTE CARLO SIMULATION OF GATE-ALL-AROUND GERMANIUM nMOSFET WITH EFFECTIVE POTENTIAL QUANTUM CORRECTION 期刊论文 journal of circuits systems and computers, 2013 Zhu, Shufang; Wei, Kangliang; Du, Gang; Liu, Xiaoyan 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 3D full band Monte Carlo simulation  effective potential method  Gate-All-Around   Optimization of Conductive Filament of Oxide-Based Resistive-Switching Random Access Memory for Low Operation Current by Stochastic Simulation 期刊论文 日本应用物理学杂志, 2013 Huang, Peng; Deng, Yexin; Gao, Bin; Chen, Bing; Zhang, Feifei; Yu, Di; Liu, Lingfeng; Du, Gang; Kang, Jinfeng; Liu, Xiaoyan 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 MODEL  RRAM