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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2013    内容类型：期刊论文    专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Remote phonon and impurity screening effect of substrate and gate dielectric on electron dynamics in single layer MoS2 期刊论文 应用物理学快报, 2013 Zeng, Lang; Xin, Zheng; Chen, Shaowen; Du, Gang; Kang, Jinfeng; Liu, Xiaoyan 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 MONOLAYER MOS2  LARGE-AREA  MOBILITY  TRANSISTORS  INSULATOR  CRYSTALS  GROWTH   A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory 期刊论文 ieee电子器件汇刊, 2013 Gao, Bin; Chen, Bing; Zhang, Feifei; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng; Yu, Hongyu; Yu, Bin 收藏  |  浏览/下载：6/0  |  提交时间：2015/11/10 Multilevel  nonvolatile memory  oxygen vacancy  resistive random access memory (RRAM)  resistive switching  THIN-FILMS   Metal-Gate/High-kappa/Ge nMOS at Small CET With Higher Mobility Than SiO2/Si at Wide Range Carrier Densities 期刊论文 ieee electron device letters, 2013 Liao, C. C.; Ku, T. C.; Lin, M. H.; Zeng, Lang; Kang, Jinfeng; Liu, Xiaoyan; Chin, Albert 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/12 Annealing  Ge  high-kappa  laser  YbGe  (111)   Optimization of Conductive Filament of Oxide-Based Resistive-Switching Random Access Memory for Low Operation Current by Stochastic Simulation 期刊论文 日本应用物理学杂志, 2013 Huang, Peng; Deng, Yexin; Gao, Bin; Chen, Bing; Zhang, Feifei; Yu, Di; Liu, Lingfeng; Du, Gang; Kang, Jinfeng; Liu, Xiaoyan 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 MODEL  RRAM   Improved Memory Characteristics of A Novel TaN/Al2O3/TiO2/HfO2/SiO2/Si Structured Charge Trapping Memory 期刊论文 日本应用物理学杂志, 2013 Peng, Yahua; Liu, Fei; Liu, Xiaoyan; Du, Gang; Kang, Jinfeng 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 POOLE-FRENKEL   RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study 期刊论文 ieee电子器件汇刊, 2013 Deng, Yexin; Huang, Peng; Chen, Bing; Yang, Xiaolin; Gao, Bin; Wang, Juncheng; Zeng, Lang; Du, Gang; Kang, Jinfeng; Liu, Xiaoyan 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 Crossbar  leakage path  memory array  nonlinearity  readout margin  resistive random access memory (RRAM)  selection device  selector  METAL-OXIDE RRAM  SWITCHING PARAMETER VARIATION  HIGH-DENSITY  MEMORY  DESIGN