RRAM Crossbar Array With Cell Selection Device: A Device and Circuit   Interaction Study

doi:10.1109/TED.2012.2231683

CORC > 北京大学 > 信息科学技术学院

	RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study
	Deng, Yexin ; Huang, Peng ; Chen, Bing ; Yang, Xiaolin ; Gao, Bin ; Wang, Juncheng ; Zeng, Lang ; Du, Gang ; Kang, Jinfeng ; Liu, Xiaoyan
刊名	ieee电子器件汇刊
	2013
关键词	Crossbar leakage path memory array nonlinearity readout margin resistive random access memory (RRAM) selection device selector METAL-OXIDE RRAM SWITCHING PARAMETER VARIATION HIGH-DENSITY MEMORY DESIGN
DOI	10.1109/TED.2012.2231683
英文摘要	The resistive random access memory (RRAM) crossbar array has been extensively studied as one of the most promising candidates for future high-density nonvolatile memory technology. However, some problems caused by circuit and device interaction, such as sneak leakage paths, result in limited array size and large power consumption, which degrade the array performance significantly. Thus, the analysis on circuit and device interaction issue is imperative. In this paper, a simulation method is developed to investigate the critical issues correlated with the interaction between devices and the circuit. The simulations show that a large off/on ratio of resistance states of RRAM is beneficial for large readout margin (i.e., array size). The existence of the selector connected in series with an RRAM device can eliminate the need for high R-on resistance, which is critical for the array consisted of only RRAM cells. The readout margin is more sensitive to the variation of R-on and is determined by the nonlinearity of the I-V characteristics of RRAM, whereas the nonlinear characteristics of the selector device are beneficial for a larger readout margin. An optimal design scheme for turn-on voltage and conductance of the selector is proposed based on the simulation.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000316817900026&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; SCI(E); EI; 35; ARTICLE; 2,SI; 719-726; 60
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291771]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Deng, Yexin,Huang, Peng,Chen, Bing,et al. RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study[J]. ieee电子器件汇刊,2013.
APA	Deng, Yexin.,Huang, Peng.,Chen, Bing.,Yang, Xiaolin.,Gao, Bin.,...&Liu, Xiaoyan.(2013).RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study.ieee电子器件汇刊.
MLA	Deng, Yexin,et al."RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study".ieee电子器件汇刊 (2013).