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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2013    学科主题：半导体材料    内容类型：期刊论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width 期刊论文 journal of applied physics, 2013, 卷号: 114, 期号: 15, 页码: 4507 Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang 收藏  |  浏览/下载：22/0  |  提交时间：2014/03/18 Growth and characterization of AlGaNAlNGaNAlGaN double heterojunction structures with AlGaN as buffer layers 期刊论文 journal of crystal growth, 2013, 卷号: 383, 页码: 25–29 Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang 收藏  |  浏览/下载：14/0  |  提交时间：2014/03/18 High performance AlGaNGaN power switch with Si3N4 Insulation 期刊论文 the european physical journal applied physics, 2013, 卷号: 61, 期号: 1, 页码: 10101 Lin, Defeng; Wang, Xiaoliang; Xiao, Hongling; Kang, He; Wang, Cuimei; Jiang, Lijuan; Feng, Chun; Chen, Hong; Deng, Qingwen; Bi, Yang; Zhang, Jingwen; Hou, Xun 收藏  |  浏览/下载：27/0  |  提交时间：2014/03/18 Bipolar characteristics of AlGaNAlNGaNAlGaN double heterojunction structure with AlGaN as buffer layer 期刊论文 journal of alloys and compounds, 2013, 卷号: 576, 页码: 48–53 Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang 收藏  |  浏览/下载：21/0  |  提交时间：2014/03/18 Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors 期刊论文 journal of semiconductors, 2013, 卷号: 34, 期号: 10, 页码: 104002 Xiaojia, Wan; Xiaoliang, Wang; Hongling, Xiao; Chun, Feng; Lijuan, Jiang; Shenqi, Qu; Zhanguo, Wang; Xun, Hou 收藏  |  浏览/下载：18/0  |  提交时间：2014/05/16