Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors

	Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors
	Xiaojia, Wan ; Xiaoliang, Wang ; Hongling, Xiao ; Chun, Feng ; Lijuan, Jiang ; Shenqi, Qu ; Zhanguo, Wang ; Xun, Hou
刊名	journal of semiconductors
	2013
卷号	34 期号:10 页码:104002
学科主题	半导体材料
收录类别	EI
语种	英语
公开日期	2014-05-16
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/25001]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Xiaojia, Wan,Xiaoliang, Wang,Hongling, Xiao,et al. Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors[J]. journal of semiconductors,2013,34(10):104002.
APA	Xiaojia, Wan.,Xiaoliang, Wang.,Hongling, Xiao.,Chun, Feng.,Lijuan, Jiang.,...&Xun, Hou.(2013).Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors.journal of semiconductors,34(10),104002.
MLA	Xiaojia, Wan,et al."Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors".journal of semiconductors 34.10(2013):104002.