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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 发表日期：2011    学科主题：半导体材料    内容类型：期刊论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文 applied physics a: materials science and processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216 Bi, Yang; Wang, XiaoLiang; Yang, CuiBai; Xiao, HongLing; Wang, CuiMei; Peng, EnChao; Lin, DeFeng; Feng, Chun; Jiang, LiJuan, 收藏  |  浏览/下载：16/0  |  提交时间：2012/06/14 Poisson equation   High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 3, 页码: 33002 Yin, Haibo; Wang, Xiaoliang; Ran, Junxue; Hu, Guoxin; Zhang, Lu; Xiao, Hongling; Li, Jing; Li, Jinmin 收藏  |  浏览/下载：21/0  |  提交时间：2012/06/14 Epitaxial growth  Gallium nitride   Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 8, 页码: 83003 Bi, Yang; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yang, Cuibai; Peng, Enchao; Lin, Defeng; Feng, Chun; Jiang, Lijuan, 收藏  |  浏览/下载：14/0  |  提交时间：2012/06/14 Aluminum  Electron mobility  Gallium nitride  High electron mobility transistors  Indium  Poisson equation  Polarization  Two dimensional electron gas   Structures and optical characteristics of InGaN quantum dots grown by MBE 期刊论文 xiyou jinshu cailiao yu gongcheng/rare metal materials and engineering, 2011, 卷号: 40, 期号: 11, 页码: 2030-2032 Wang, Baozhu; Yan, Cuiying; Wang, Xiaoliang 收藏  |  浏览/下载：22/0  |  提交时间：2012/06/14 Atomic force microscopy  Gallium nitride  Molecular beam epitaxy  Optical materials  Optical properties  Reflection high energy electron diffraction  Sapphire