QQ客服 官方微博 反馈留言

浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2010    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating 期刊论文 applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: art. no. 171101 Cao YL (Cao Yu-Lian); Yang T (Yang Tao); Xu PF (Xu Peng-Fei); Ji HM (Ji Hai-Ming); Gu YX (Gu Yong-Xian); Wang XD (Wang Xiao-Dong); Wang Q (Wang Qing); Ma WQ (Ma Wen-Quan); Chen LH (Chen Liang-Hui) 收藏  |  浏览/下载：224/51  |  提交时间：2010/05/24 excited states  gallium arsenide  III-V semiconductors  indium compounds  laser tuning  optical films  quantum dot lasers  silicon compounds  tantalum compounds  TEMPERATURE-DEPENDENCE  THRESHOLD  PERFORMANCE  GAIN   Design and Characterization of Evanescently Coupled Uni-Traveling Carrier Photodiodes with a Multimode Diluted Waveguide Structure 期刊论文 chinese physics letters, 27 (2): art. no. 028501 feb 2010, 2010, 卷号: 27, 期号: 2, 页码: art. no. 028501 Zhang YX (Zhang Yun-Xiao); Pan JQ (Pan Jiao-Qing); Zhao LJ (Zhao Ling-Juan); Zhu HL (Zhu Hong-Liang); Wang W (Wang Wei) 收藏  |  浏览/下载：196/47  |  提交时间：2010/04/13 I-N PHOTODIODE  HIGH RESPONSIVITY  HIGH-SPEED  OPTIMIZATION  FABRICATION   Fabrication and luminescence characterization of two-dimensional GaAs-based photonic crystal nanocavities 期刊论文 acta physica sinica, 2010, 卷号: 59, 期号: 10, 页码: 7073-7077 Peng YS (Peng Yin-Sheng); Ye XL (Ye Xiao-Ling); Xu B (Xu Bo); Niu JB (Niu Jie-Bin); Jia R (Jia Rui); Wang ZG (Wang Zhan-Guo); Liang S (Liang Song); Yang XH (Yang Xiao-Hong) 收藏  |  浏览/下载：32/0  |  提交时间：2010/11/14 photonic crystal nanocavity   Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 7, 页码: art. no. 074216 Zhang YX (Zhang Yun-Xiao); Liao ZY (Liao Zai-Yi); Zhao LJ (Zhao Ling-Juan); Pan JQ (Pan Jiao-Qing); Zhu HL (Zhu Hong-Liang); Wang W (Wang Wei) 收藏  |  浏览/下载：256/39  |  提交时间：2010/08/17 electroabsorption modulator  intra-step quantum wells  uni-traveling-carrier RF-gain  WAVELENGTH CONVERSION  WAVE-GUIDE   Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057104 Hou QF (Hou Qi-Feng); Wang XL (Wang Xiao-Liang); Xiao; HL (Xiao Hong-Ling); Wang CM (Wang Cui-Mei); Yang CB (Yang Cui-Bai); Li JM (Li Jin-Min) 收藏  |  浏览/下载：258/64  |  提交时间：2010/05/24 N-TYPE GAN  DEEP LEVELS  SELENIDE  DEFECTS