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Improvement of Resistive Switching Properties in ZrO(2)-Based ReRAM With Implanted Ti Ions 期刊论文
IEEE Electron Device Letters, 2009, 卷号: Vol.30 No.12, 页码: 1335-1337
作者:  Chen, JN [ 2 ];  Zhang, S [ 1 ];  Long, SB [ 1 ];  Liu, M [ 1 ] Hide ResearcherID and ORCID View ResearcherID and ORCID Author ResearcherID ORCID Number Liu, QI B-1043-2009 http://orcid.org/0000-0001-7062-831X Liu, Ming A-4456-2010 Long, Shibing C-9206-2011;  By:Liu, Q [ 1,2 ]
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