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	Improvement of Resistive Switching Properties in ZrO(2)-Based ReRAM With Implanted Ti Ions
	Chen, JN [ 2 ]; Zhang, S [ 1 ]; Long, SB [ 1 ]; Liu, M [ 1 ] Hide ResearcherID and ORCID View ResearcherID and ORCID Author ResearcherID ORCID Number Liu, QI B-1043-2009 http://orcid.org/0000-0001-7062-831X Liu, Ming A-4456-2010 Long, Shibing C-9206-2011; By:Liu, Q [ 1,2 ]; Zuo, QY [ 1 ]; Wang, W [ 3 ]
刊名	IEEE Electron Device Letters
	2009
卷号	Vol.30 No.12页码:1335-1337
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2205479
专题	安徽大学
作者单位	1.Anhui Univ, Coll Elect & Technol, Hefei 230039, Peoples R China Organization-Enhanced Name Anhui University 2.Chinese Acad Sci, Key Lab Nanofabricat & Novel Devices Integrated T, Inst Microelect, Beijing 100029, Peoples R China Organization-Enhanced Name Chinese Academy of Sciences Institute of Microelectronics, CAS 3.SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA Organization-Enhanced Name State University of New York Albany State University of New York System SUNY Polytechnic Institute
推荐引用方式 GB/T 7714	Chen, JN [ 2 ],Zhang, S [ 1 ],Long, SB [ 1 ],et al. Improvement of Resistive Switching Properties in ZrO(2)-Based ReRAM With Implanted Ti Ions[J]. IEEE Electron Device Letters,2009,Vol.30 No.12:1335-1337.
APA	Chen, JN [ 2 ].,Zhang, S [ 1 ].,Long, SB [ 1 ].,Liu, M [ 1 ] Hide ResearcherID and ORCID View ResearcherID and ORCID Author ResearcherID ORCID Number Liu, QI B-1043-2009 http://orcid.org/0000-0001-7062-831X Liu, Ming A-4456-2010 Long, Shibing C-9206-2011.,By:Liu, Q [ 1,2 ].,...&Wang, W [ 3 ].(2009).Improvement of Resistive Switching Properties in ZrO(2)-Based ReRAM With Implanted Ti Ions.IEEE Electron Device Letters,Vol.30 No.12,1335-1337.
MLA	Chen, JN [ 2 ],et al."Improvement of Resistive Switching Properties in ZrO(2)-Based ReRAM With Implanted Ti Ions".IEEE Electron Device Letters Vol.30 No.12(2009):1335-1337.

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