中国开放科研知识云: 检索

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	Photoluminescence thermal quenching behaviors of Er-doped SiOx (x < 2) prepared by ion implantation 期刊论文 PHYSICA B-CONDENSED MATTER, 2005, 卷号: 362, 期号: 1-4, 页码: 208-213 Zhang, CS; Xao, HB; Wang, YJ; Cheng, ZJ; Cheng, XL; Zhang, F 收藏 \| 浏览/下载：11/0 \| 提交时间：2012/03/24 CRYSTALLINE SI THIN-FILMS SILICON LUMINESCENCE ELECTROLUMINESCENCE EXCITATION DEPENDENCE
	Fabrication of strained silicon on insulator by strain transfer process 期刊论文 APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 5, 页码: 51921-51921 Jin, B; Wang, X; Chen, J; Cheng, XL; Chen, ZJ 收藏 \| 浏览/下载：20/0 \| 提交时间：2012/03/24 HOLE MOBILITY ENHANCEMENT SI N-MOSFETS LAYER TRANSFER SUBSTRATE ELECTRON SI1-XGEX
	Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 卷号: 234, 期号: 3, 页码: 243-248 Cheng,XL; Chen,ZJ; Wang,YJ; Jin,B; Zhang,F; Zou,SC 收藏 \| 浏览/下载：19/0 \| 提交时间：2012/03/24 HOLE MOBILITY ENHANCEMENT HIGH-GE FRACTION STRAINED-SI INSULATOR SUBSTRATE N-MOSFETS ELECTRON ULTRATHIN

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