Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation

	Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation
	Cheng,XL ; Chen,ZJ ; Wang,YJ ; Jin,B ; Zhang,F ; Zou,SC
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2005
卷号	234 期号:3 页码:243-248
关键词	HOLE MOBILITY ENHANCEMENT HIGH-GE FRACTION STRAINED-SI INSULATOR SUBSTRATE N-MOSFETS ELECTRON ULTRATHIN
ISSN号	0168-583X
通讯作者	Cheng, XL, Univ Sci & Technol Suzhou, Suzhou 215009, Peoples R China
学科主题	Instruments & Instrumentation; Nuclear Science & Technology; Physics ; Atomic ; Molecular & Chemical; Physics ; Nuclear
收录类别	SCI
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95280]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Cheng,XL,Chen,ZJ,Wang,YJ,et al. Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2005,234(3):243-248.
APA	Cheng,XL,Chen,ZJ,Wang,YJ,Jin,B,Zhang,F,&Zou,SC.(2005).Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,234(3),243-248.
MLA	Cheng,XL,et al."Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 234.3(2005):243-248.