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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 专题：合肥物质科学研究院    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Coexistence of (O-2)(n-) and Trapped Molecular O-2 as the Oxidized Species in P2-Type Sodium 3d Layered Oxide and Stable Interface Enabled by Highly Fluorinated Electrolyte 期刊论文 JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2021, 卷号: 143 作者:  Zhao, Chong;  Li, Chao;  Liu, Hui;  Qiu, Qing;  Geng, Fushan 收藏  |  浏览/下载：40/0  |  提交时间：2022/01/10 Oxygen Vacancy Defects Boosted High Performance p-Type Delafossite CuCrO2 Gas Sensors 期刊论文 ACS APPLIED MATERIALS & INTERFACES, 2018, 卷号: 10, 期号: 40, 页码: 34727-34734 作者:  Tong, Bin;  Deng, Zanhong;  Xu, Bo;  Meng, Gang;  Shao, Jingzhen 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/25 p-type  delafossite CuCrO2  singly ionized oxygen vacancy  sensitivity   Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文 ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9 作者:  Jiang, Shanshan;  He, Gang;  Liu, Mao;  Zhu, Li;  Liang, Shuang 收藏  |  浏览/下载：66/0  |  提交时间：2019/06/10 electrical properties  forming gas annealing  high-k gate dielectrics  interface chemistry  metal-oxide-semiconductor capacitors   Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 704, 期号: 无, 页码: 322-328 作者:  Jiang, S. S.;  He, G.;  Liang, S.;  Zhu, L.;  Li, W. D. 收藏  |  浏览/下载：20/0  |  提交时间：2018/07/04 High-k Gate Dielectrics  Interface Chemistry  Xps Electrical Properties  Cmos Devices   Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack 期刊论文 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 卷号: 16, 期号: 8, 页码: 8075-8082 作者:  Gao, Juan;  He, Gang;  Zhang, Jiwen;  Chen, Xuefei;  Jin, Peng 收藏  |  浏览/下载：22/0  |  提交时间：2017/11/21 High-k Gate Dielectric  Atomic Layer Deposition  Electrical Properties  Leakage Current Mechanism   Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 667, 期号: 无, 页码: 352-358 作者:  Gao, Juan;  He, Gang;  Sun, Zhaoqi;  Chen, Hanshuang;  Zheng, Changyong 收藏  |  浏览/下载：20/0  |  提交时间：2017/10/18 High-k Gate Dielectric  Atomic-layer-deposition  Electrical Properties  Carrier Transportation Mechanism  Incorporation