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Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging 期刊论文
applied physics letters, 2011, 卷号: 99, 期号: 11, 页码: 113115
Zhu JH; Ning JQ; Zheng CC; Xu SJ; Zhang SM; Yang H
收藏  |  浏览/下载：73/0  |  提交时间：2012/02/06
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:  Song HP;  Shi K;  Sang L;  Wei HY
收藏  |  浏览/下载：58/3  |  提交时间：2011/07/05
Electrodepostied polyaniline films decorated with nano-islands: Characterization and application as anode buffer layers in solar cells 期刊论文
solar energy materials and solar cells, 2011, 卷号: 95, 期号: 2, 页码: 440-445
作者:  Liu K;  Tan FR
收藏  |  浏览/下载：120/5  |  提交时间：2011/07/05
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文
nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: article no.235603
作者:  Song HP
收藏  |  浏览/下载：72/3  |  提交时间：2011/07/05
IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES 期刊论文
international journal of modern physics b, 2010, 卷号: 24, 期号: 27, 页码: 5439-5450
作者:  Hao GD
收藏  |  浏览/下载：49/5  |  提交时间：2011/07/05
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文
journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464
作者:  Wang YT;  Zhao DG;  Zhang SM;  Yang H;  Jiang DS
收藏  |  浏览/下载：150/11  |  提交时间：2010/04/04
Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods 期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 2, 页码: art. no. 026102
作者:  Jiang DS;  Zhang SM;  Yang H;  Yang H;  Wang YT
收藏  |  浏览/下载：59/0  |  提交时间：2010/03/08
Passively mode-locked yvo(4)/nd : yvo(4) composite crystal laser with a semiconductor saturable absorber as a high reflector 期刊论文
Laser physics letters, 2008, 卷号: 5, 期号: 6, 页码: 421-424
作者:  Zhuo, Z.;  Li, T.;  Wang, Y. -G.
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12
Optimizing the GaAs capping layer growth of 1.3 mu m InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures 期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5469-5472
作者:  Yang T
收藏  |  浏览/下载：253/54  |  提交时间：2010/03/08
Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition 期刊论文
japanese journal of applied physics, 2008, 卷号: 47, 期号: 9, 页码: 7026-7031 part 1
Zhong, L; Ma, XY
收藏  |  浏览/下载：56/0  |  提交时间：2010/03/08

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