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Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p-i-n avalanche photodiodes 期刊论文
chinese physics b, 2014, 卷号: 23, 期号: 2, 页码: 028503
Li, XJ; Zhao, DG; Jiang, DS; Liu, ZS; Chen, P; Wu, LL; Li, L; Le, LC; Yang, J; He, XG; Wang, H; Zhu, JJ; Zhang, SM; Zhang, BS; Yang, H
收藏  |  浏览/下载:15/0  |  提交时间:2015/03/20
Effect of compensation doping on the electrical and optical properties of mid-infrared type-ii inas/gasb superlattice photodetectors 期刊论文
Chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: 6
作者:  Wang Yong-Bin;  Xu Yun;  Zhang Yu;  Yu Xiu;  Song Guo-Feng
收藏  |  浏览/下载:31/0  |  提交时间:2019/05/12
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:  Li JB
收藏  |  浏览/下载:59/6  |  提交时间:2011/07/05
Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films 期刊论文
Diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376
作者:  Ying, J.;  Zhang, X. W.;  Fan, Y. M.;  Tan, H. R.;  Yin, Z. G.
收藏  |  浏览/下载:30/0  |  提交时间:2019/05/12
Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face iii-nitride structure 期刊论文
Applied physics letters, 2010, 卷号: 97, 期号: 6, 页码: 3
作者:  Zhang, L.;  Ding, K.;  Yan, J. C.;  Wang, J. X.;  Zeng, Y. P.
收藏  |  浏览/下载:20/0  |  提交时间:2019/05/12
Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文
physical review b, 2010, 卷号: 82, 期号: 19, 页码: art. no. 193204
Deng HX (Deng Hui-Xiong); Li JB (Li Jingbo); Li SS (Li Shu-Shen); Peng HW (Peng Haowei); Xia JB (Xia Jian-Bai); Wang LW (Wang Lin-Wang); Wei SH (Wei Su-Huai)
收藏  |  浏览/下载:47/0  |  提交时间:2010/12/27
Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films 期刊论文
diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376
Ying J (Ying J.); Zhang XW (Zhang X. W.); Fan YM (Fan Y. M.); Tan HR (Tan H. R.); Yin ZG (Yin Z. G.)
收藏  |  浏览/下载:27/0  |  提交时间:2010/12/28
Origin and enhancement of hole-induced ferromagnetism in first-row d(0) semiconductors 期刊论文
Physical review letters, 2009, 卷号: 102, 期号: 1, 页码: 4
作者:  Peng, Haowei;  Xiang, H. J.;  Wei, Su-Huai;  Li, Shu-Shen;  Xia, Jian-Bai
收藏  |  浏览/下载:16/0  |  提交时间:2019/05/12
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP
收藏  |  浏览/下载:40/0  |  提交时间:2010/03/09
Origin and Enhancement of Hole-Induced Ferromagnetism in First-Row d(0) Semiconductors 期刊论文
physical review letters, 2009, 卷号: 102, 期号: 1, 页码: art. no. 017201
作者:  Li JB
收藏  |  浏览/下载:393/60  |  提交时间:2010/03/08


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