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CORC

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Comparison of optoelectrical characteristics between Schottky and Ohmic contacts to β-Ga2O3 thin film 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 卷号: 53, 期号: 8, 页码: 085105
作者:  Zeng Liu;   Yusong Zhi;   Shan Li;   Yuanyuan Liu;   ;   Xiao Tang;   Zuyong Yan;   Peigang Li;   Xiaohang Li;   Daoyou Guo;   Zhenping Wu;   Weihua Tang
收藏  |  浏览/下载：11/0  |  提交时间：2021/11/05
Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts 期刊论文
journal of applied physics, 2016, 卷号: 119, 期号: 5, 页码: 054304
Boyong Feng; Shaoyun Huang; Jiyin Wang; Dong Pan; Jianghua Zhao; H. Q. Xu
收藏  |  浏览/下载：16/0  |  提交时间：2017/03/16
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN_AlN_GaN heterostructure field-effect transistors 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang , Lin Zhao-Jun, Lü Yuan-Jie, Luan Chong-Biao and Wang Zhan-Guo
收藏  |  浏览/下载：29/0  |  提交时间：2014/03/18
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang; Lin Zhao-Jun; Lu Yuan-Jie; Luan Chong-Biao; Wang Zhan-Guo
收藏  |  浏览/下载：28/0  |  提交时间：2013/09/17
Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes 期刊论文
chinese physics b, 2012, 卷号: 21, 期号: 1, 页码: 17103
Cao, ZF; Lin, ZJ; Lu, YJ; Luan, CB; Yu, YX; Chen, H; Wang, ZG
收藏  |  浏览/下载：8/0  |  提交时间：2013/03/20
The transport mechanism of gate leakage current in algan/gan high electron mobility transistors 期刊论文
European physical journal-applied physics, 2011, 卷号: 55, 期号: 3, 页码: 5
作者:  Lin, D. F.;  Wang, X. L.;  Xiao, H. L.;  Wang, C. M.;  Jiang, L. J.
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12
Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.74512
Lv YJ; Lin ZJ; Corrigan TD; Zhao JZ; Cao ZF; Meng LG; Luan CB; Wang ZG; Chen H
收藏  |  浏览/下载：64/6  |  提交时间：2011/07/05
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG
收藏  |  浏览/下载：57/2  |  提交时间：2011/07/05
Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 12, 页码: article no.123512
Lv YJ; Lin ZJ; Zhang Y; Meng LG; Luan CB; Cao ZF; Chen H; Wang ZG
收藏  |  浏览/下载：67/9  |  提交时间：2011/07/05
Effect of silver growth temperature on the contacts between ag and zno thin films 期刊论文
Science in china series e-technological sciences, 2009, 卷号: 52, 期号: 9, 页码: 2779-2784
作者:  Li XinKun;  Li QingShan;  Liang DeChun;  Xu YanDong;  Xie XiaoJun
收藏  |  浏览/下载：13/0  |  提交时间：2019/05/12

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