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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy (vol 94, 052101, 2009) 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 12, 页码: art. no. 129901 作者:  Wei HY;  Song HP;  Jiao CM 收藏  |  浏览/下载：379/108  |  提交时间：2010/03/08 aluminium compounds  core levels  III-V semiconductors  magnesium compounds  semiconductor heterojunctions  semiconductor-insulator boundaries  X-ray photoelectron spectra   Depolarization blueshift in intersubband transitions of triangular quantum wires 期刊论文 journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113712 作者:  Song HP;  Zhang B 收藏  |  浏览/下载：31/0  |  提交时间：2010/04/04 aluminium compounds  effective mass  gallium arsenide  III-V semiconductors  SCF calculations  semiconductor quantum wires  spectral line shift  EXCHANGE INTERACTION  ENERGY  STATES  ABSORPTION  NANOWIRES  ELECTRONS  SUBBANDS  WELLS  FIELD   Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301 作者:  Jin P;  Wei HY;  Song HP 收藏  |  浏览/下载：310/47  |  提交时间：2010/03/08 conduction bands  III-V semiconductors  II-VI semiconductors  indium compounds  interface states  polarisation  semiconductor heterojunctions  valence bands  wide band gap semiconductors  X-ray photoelectron spectra  zinc compounds   Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 1, 页码: art. no. 011107 Wang, BR; Sun, BQ; Ji, Y; Dou, XM; Xu, ZY; Wang, ZM; Salamo, GJ 收藏  |  浏览/下载：104/2  |  提交时间：2010/03/08 LOCALIZED STATES  ISLANDS  WIRES  SUPERLATTICES  ORGANIZATION  GAAS(100)  EXCITONS  GROWTH  DECAY  GAAS   Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 24, 页码: art. no. 242107 Zhang BL; Sun GS; Guo Y; Zhang PF; Zhang RQ; Fan HB; Liu XL; Yang SY; Zhu QS; Wang ZG 收藏  |  浏览/下载：231/42  |  提交时间：2010/03/08 conduction bands  III-V semiconductors  indium compounds  interface states  semiconductor heterojunctions  silicon compounds  valence bands  wide band gap semiconductors  X-ray photoelectron spectra   Interdot interaction induced zero-bias maximum of the differential conductance in parallel double quantum dots 期刊论文 journal of applied physics, 2006, 卷号: 99, 期号: 4, 页码: art.no.043705 Chi F; Li SS 收藏  |  浏览/下载：94/0  |  提交时间：2010/04/11 AHARONOV-BOHM INTERFEROMETER  SINGLE-ELECTRON TRANSISTOR  COULOMB-BLOCKADE  ANDERSON MODEL  MAGNETIC-FLUX  KONDO REGIME  TRANSPORT  EQUILIBRIUM  DEVICES   Magnetic properties and rectifying behaviour of silicon doped with gadolinium 期刊论文 acta physica sinica, 2003, 卷号: 52, 期号: 6, 页码: 1469-1473 Zhou JP; Chen NF; Song SL; Chai CL; Yang SY; Liu ZK; Lin LY 收藏  |  浏览/下载：35/0  |  提交时间：2010/08/12 magnetic semiconductor  magnetic p-n junction  ion beam epitaxy  gadolinium silicides  METAL-INSULATOR-TRANSITION  P-N-JUNCTION  INDUCED FERROMAGNETISM  SI/SIER INTERFACE  BEAM EPITAXY  SEMICONDUCTORS  EXCITATION  MAGNETORESISTANCE  ALLOYS   Magnetic properties of silicon doped with gadolinium 期刊论文 applied physics a-materials science & processing, 2003, 卷号: 77, 期号: 3-4, 页码: 599-602 Zhou JP; Chen NF; Song SL; Chai CL; Yang SY; Liu ZK; Lin LY 收藏  |  浏览/下载：321/10  |  提交时间：2010/08/12 METAL-INSULATOR-TRANSITION  BEAM EPITAXY TECHNIQUE  SEMICONDUCTING SILICIDES  INDUCED FERROMAGNETISM  FILMS  MAGNETORESISTANCE  TEMPERATURE  ALLOYS   Spectral properties of a double-quantum-dot structure: A causal Green's function approach 期刊论文 physical review b, 1999, 卷号: 60, 期号: 12, 页码: 8727-8733 You JQ; Zheng HZ 收藏  |  浏览/下载：79/0  |  提交时间：2010/08/12 ANDERSON MODEL  RENORMALIZATION-GROUP  TRANSPORT  OSCILLATIONS  IMPURITY  LEVEL