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CORC

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The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:  Li JB
收藏  |  浏览/下载：59/6  |  提交时间：2011/07/05
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B; Li ZC; Yao R; Liang M; Yan FW; Wang GH
收藏  |  浏览/下载：93/5  |  提交时间：2011/07/05
Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k center dot p model 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.30507
Yu X; Gu YX; Wang Q; Wei X; Chen LH
收藏  |  浏览/下载：65/4  |  提交时间：2011/07/06
Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix 期刊论文
journal of alloys and compounds, 2011, 卷号: 509, 期号: 9, 页码: 3963-3966
Song C; Rui YJ; Wang QB; Xu J; Li W; Chen KJ; Zuo YH; Wang QM
收藏  |  浏览/下载：54/6  |  提交时间：2011/07/05
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.50
作者:  Wei HY;  Song HP;  Zhang B
收藏  |  浏览/下载：64/2  |  提交时间：2011/07/05
Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films 期刊论文
physical review b, 2010, 卷号: 81, 期号: 23, 页码: art. no. 235201
Khazen K (Khazen Kh.); von Bardeleben HJ (von Bardeleben H. J.); Cantin JL (Cantin J. L.); Mauger A (Mauger A.); Chen L (Chen L.); Zhao JH (Zhao J. H.)
收藏  |  浏览/下载：18/0  |  提交时间：2010/06/18
Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser 期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 7, 页码: art. no. 073108
Zhu YH (Zhu Yuan-Hui); Xu Q (Xu Qiang); Fan WJ (Fan Wei-Jun); Wang JW (Wang Jian-Wei)
收藏  |  浏览/下载：67/3  |  提交时间：2010/05/07
ALLOYS  GE  
Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers 期刊论文
physical review b, 2010, 卷号: 81, 期号: 12, 页码: art. no. 125314
作者:  Wang H;  Wang H;  Yang;  Jiang DS
收藏  |  浏览/下载：122/5  |  提交时间：2010/04/28
GAN  ALLOYS  
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804
Lu GJ (Lu Guo-Jun); Zhu JJ (Zhu Jian-Jun); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui)
收藏  |  浏览/下载：110/2  |  提交时间：2010/04/22
Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: art. no. 106802
Guo X (Guo Xi); Wang H (Wang Hui); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui)
收藏  |  浏览/下载：28/0  |  提交时间：2010/11/02

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