Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers

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	Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers
	Wang H; Wang H; Yang; Jiang DS
刊名	physical review b
	2010
卷号	81 期号:12 页码:art. no. 125314
关键词	GAN ALLOYS
通讯作者	jahn, u, paul drude inst festkorperelekt, hausvogteipl 5-7, d-10117 berlin, germany. 电子邮箱地址: ujahn@pdi-berlin.de
合作状况	国际
英文摘要	using spatially resolved cathodoluminescence spectroscopy, we investigate the spatial luminescence distribution in a fully strained (in,ga)n layer, in particular, its correlation with the distribution of threading dislocations (tds). regarding the impact of tds on the luminescence properties, we can clearly distinguish between pure edge-type tds and tds with screw component. at the positions of both types of tds, we establish nonradiative recombination sinks. the radius for carrier capture is at least four times larger for tds with screw component as for pure edge-type tds. the large capture radius of the former is due to a spiral-like growth mode resulting in an increase in the in content in the center of the spiral domains in comparison to their periphery.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-28t13:31:51z no. of bitstreams: 1 carrier capture by threading dislocations in (in,ga)ngan heteroepitaxial layers.pdf: 676098 bytes, checksum: 9e49feb42d6d480009aac5029eb15b52 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-28t13:49:55z (gmt) no. of bitstreams: 1 carrier capture by threading dislocations in (in,ga)ngan heteroepitaxial layers.pdf: 676098 bytes, checksum: 9e49feb42d6d480009aac5029eb15b52 (md5); made available in dspace on 2010-04-28t13:49:55z (gmt). no. of bitstreams: 1 carrier capture by threading dislocations in (in,ga)ngan heteroepitaxial layers.pdf: 676098 bytes, checksum: 9e49feb42d6d480009aac5029eb15b52 (md5) previous issue date: 2010; 国际
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-04-28 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11206]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Wang H,Wang H,Yang,et al. Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers[J]. physical review b,2010,81(12):art. no. 125314.
APA	Wang H,Wang H,Yang,&Jiang DS.(2010).Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers.physical review b,81(12),art. no. 125314.
MLA	Wang H,et al."Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers".physical review b 81.12(2010):art. no. 125314.