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Surface alloy formation of noble adatoms adsorbed on si(111)-root 3 x root 3-pb surface: a first-principles study 期刊论文
Journal of physics-condensed matter, 2011, 卷号: 23, 期号: 26, 页码: 12
作者:  Li, Chong;  Wang, Fei;  Sun, Q.;  Jia, Yu
收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12
The transition from two-stage to three-stage evolution of wetting layer of inas/gaas quantum dots caused by postgrowth annealing 期刊论文
Applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: 3
作者:  Zhou, G. Y.;  Chen, Y. H.;  Yu, J. L.;  Zhou, X. L.;  Ye, X. L.
收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12
Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110) 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.125
作者:  Chen L
收藏  |  浏览/下载：38/1  |  提交时间：2011/07/05
Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: 463
Li, TF; Chen, YH; Lei, W; Zhou, XL; Luo, S; Hu, YZ; Wang, LJ; Yang, T; Wang, ZG
收藏  |  浏览/下载：19/0  |  提交时间：2012/02/06
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914
作者:  Jin P;  Ye XL;  Zhou XL
收藏  |  浏览/下载：53/4  |  提交时间：2011/07/05
The contributions of composition and strain to the phonon shift in Ge1-xSnx alloys 期刊论文
solid state communications, 2011, 卷号: 151, 期号: 8, 页码: 647-650
Su SJ; Wang W; Cheng BW; Hu WX; Zhang GZ; Xue CL; Zuo YH; Wang QM
收藏  |  浏览/下载：66/3  |  提交时间：2011/07/05
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102
作者:  Pan X;  Hou QF
收藏  |  浏览/下载：85/7  |  提交时间：2011/07/05
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:  Pan X
收藏  |  浏览/下载：82/5  |  提交时间：2011/07/05
Au@Si-n: Growth behavior, stability and electronic structure 期刊论文
physics letters a, 2010, 卷号: 374, 期号: 27, 页码: 2736-2742
Wang J (Wang Jing); Liu Y (Liu Ying); Li YC (Li You-Cheng)
收藏  |  浏览/下载：22/0  |  提交时间：2010/07/18
Study of GaN epilayers growth on freestanding Si cantilevers 期刊论文
solid-state electronics, 2010, 卷号: 54, 期号: 1, 页码: 4-7
Chen J; Wang X; Wu AM; Zhang B; Wang X; Wu YX; Zhu JJ; Yang H
收藏  |  浏览/下载：74/0  |  提交时间：2010/04/04

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