QQ客服 官方微博 反馈留言

	The transition from two-stage to three-stage evolution of wetting layer of inas/gaas quantum dots caused by postgrowth annealing
	Zhou, G. Y.; Chen, Y. H.; Yu, J. L.; Zhou, X. L.; Ye, X. L.; Jin, P.; Wang, Z. G.
刊名	Applied physics letters
	2011-02-14
卷号	98期号:7页码:3
ISSN号	0003-6951
DOI	10.1063/1.3552967
通讯作者	Chen, y. h.(yhchen@semi.ac.cn)
英文摘要	For the inas/gaas quantum dot (qd) system, the evolution of wetting layer (wl) with inas deposition thickness has been studied under different postgrowth annealing (pga) durations using reflectance difference spectroscopy. for the sample without pga, wl thickness remains constant after the formation of qds, exhibiting a typical two-stage evolution, whereas for the samples with pga, wl thickness continuously increases linearly with a reduced slope after the formation of qds and is fixed in ripening growth, indicating a three-stage evolution. by adopting a theoretical model, we have well simulated the two kinds of evolution and found that the variations of qd's morphology and the interaction of qds occurring during pga lead to the different evolution behaviors of wl. (c) 2011 american institute of physics. [doi:10.1063/1.3552967]
WOS关键词	SPECTROSCOPY
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000287507200025
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428443
专题	半导体研究所
通讯作者	Chen, Y. H.
作者单位	Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhou, G. Y.,Chen, Y. H.,Yu, J. L.,et al. The transition from two-stage to three-stage evolution of wetting layer of inas/gaas quantum dots caused by postgrowth annealing[J]. Applied physics letters,2011,98(7):3.
APA	Zhou, G. Y..,Chen, Y. H..,Yu, J. L..,Zhou, X. L..,Ye, X. L..,...&Wang, Z. G..(2011).The transition from two-stage to three-stage evolution of wetting layer of inas/gaas quantum dots caused by postgrowth annealing.Applied physics letters,98(7),3.
MLA	Zhou, G. Y.,et al."The transition from two-stage to three-stage evolution of wetting layer of inas/gaas quantum dots caused by postgrowth annealing".Applied physics letters 98.7(2011):3.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。