The transition from two-stage to three-stage evolution of wetting layer of inas/gaas quantum dots caused by postgrowth annealing | |
Zhou, G. Y.; Chen, Y. H.; Yu, J. L.; Zhou, X. L.; Ye, X. L.; Jin, P.; Wang, Z. G. | |
刊名 | Applied physics letters
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2011-02-14 | |
卷号 | 98期号:7页码:3 |
ISSN号 | 0003-6951 |
DOI | 10.1063/1.3552967 |
通讯作者 | Chen, y. h.(yhchen@semi.ac.cn) |
英文摘要 | For the inas/gaas quantum dot (qd) system, the evolution of wetting layer (wl) with inas deposition thickness has been studied under different postgrowth annealing (pga) durations using reflectance difference spectroscopy. for the sample without pga, wl thickness remains constant after the formation of qds, exhibiting a typical two-stage evolution, whereas for the samples with pga, wl thickness continuously increases linearly with a reduced slope after the formation of qds and is fixed in ripening growth, indicating a three-stage evolution. by adopting a theoretical model, we have well simulated the two kinds of evolution and found that the variations of qd's morphology and the interaction of qds occurring during pga lead to the different evolution behaviors of wl. (c) 2011 american institute of physics. [doi:10.1063/1.3552967] |
WOS关键词 | SPECTROSCOPY |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
出版者 | AMER INST PHYSICS |
WOS记录号 | WOS:000287507200025 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2428443 |
专题 | 半导体研究所 |
通讯作者 | Chen, Y. H. |
作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Zhou, G. Y.,Chen, Y. H.,Yu, J. L.,et al. The transition from two-stage to three-stage evolution of wetting layer of inas/gaas quantum dots caused by postgrowth annealing[J]. Applied physics letters,2011,98(7):3. |
APA | Zhou, G. Y..,Chen, Y. H..,Yu, J. L..,Zhou, X. L..,Ye, X. L..,...&Wang, Z. G..(2011).The transition from two-stage to three-stage evolution of wetting layer of inas/gaas quantum dots caused by postgrowth annealing.Applied physics letters,98(7),3. |
MLA | Zhou, G. Y.,et al."The transition from two-stage to three-stage evolution of wetting layer of inas/gaas quantum dots caused by postgrowth annealing".Applied physics letters 98.7(2011):3. |
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