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科研机构
半导体研究所 [21]
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期刊论文 [15]
会议论文 [6]
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2011 [1]
2010 [1]
2009 [1]
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半导体材料 [14]
半导体物理 [5]
光电子学 [1]
半导体化学 [1]
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Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL
;
Chen YH
;
Jiang CY
;
Liu Y
;
Ma H
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  |  
浏览/下载:36/4
  |  
提交时间:2011/07/05
MOLECULAR-BEAM EPITAXY
INVERSION ASYMMETRY
HETEROSTRUCTURES
SEGREGATION
INTERFACE
Effective recombination velocity of textured surfaces
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 19, 页码: art. no. 193107
Xiong KL (Xiong Kanglin)
;
Lu SL (Lu Shulong)
;
Jiang DS (Jiang Desheng)
;
Dong JR (Dong Jianrong)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:119/3
  |  
提交时间:2010/06/04
carrier lifetime
numerical analysis
semiconductor thin films
surface recombination
surface texture
GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy
期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 2, 页码: art. no. 028102
作者:
Tang B
;
Wang GW
;
Xu YQ
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  |  
浏览/下载:160/45
  |  
提交时间:2010/03/08
INAS/GA1-XINXSB SUPERLATTICE
GASB
HETEROJUNCTIONS
PHOTODIODES
SEGREGATION
LAYERS
INAS
ALSB
Magnetic coupling properties of mn-doped ZnO nanowires: First-principles calculations
期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 7, 页码: art. no. 073903
Shi, H
;
Duan, Y
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  |  
浏览/下载:45/2
  |  
提交时间:2010/03/08
HIGH CURIE-TEMPERATURE
SPINODAL-DECOMPOSITION
ROOM-TEMPERATURE
1ST PRINCIPLES
THIN-FILMS
SEMICONDUCTORS
FERROMAGNETISM
STABILIZATION
GROWTH
PHASE
Evolution of wetting layer in InAs/GaAs quantum dot system
期刊论文
nanoscale research letters, 2006, 卷号: 1, 期号: 1, 页码: 79-83
Chen YH (Chen Y. H.)
;
Ye XL (Ye X. L.)
;
Wang ZG (Wang Z. G.)
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  |  
浏览/下载:59/0
  |  
提交时间:2010/04/11
quantum dots
wetting layer
reflectance difference spectroscopy
segregation
Influence of dislocation stress field on distribution of quantum dots
期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 130-133
作者:
Xu B
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  |  
浏览/下载:56/0
  |  
提交时间:2010/04/11
stress
surface structure
semiconducting III-V materials
MOLECULAR-BEAM EPITAXY
STRAIN
THICKNESS
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
会议论文
10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003
作者:
Ye XL
;
Xu B
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  |  
浏览/下载:11/0
  |  
提交时间:2010/10/29
SHORT-PERIOD SUPERLATTICES
RAMAN-SCATTERING
QUANTUM-WELLS
GROWTH
ROUGHNESS
SEGREGATION
ALAS/GAAS
ALAS
GAAS
Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry
期刊论文
materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 62-65
作者:
Ye XL
;
Xu B
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  |  
浏览/下载:63/4
  |  
提交时间:2010/08/12
reflectance-difference spectroscopy
indium segregation
InGaAs/GaAs quantum wells
EPITAXY-GROWN INGAAS/GAAS
SURFACE SEGREGATION
INTERFACE
Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy
期刊论文
physical review b, 2002, 卷号: 66, 期号: 19, 页码: art.no.195321
作者:
Ye XL
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  |  
浏览/下载:66/0
  |  
提交时间:2010/08/12
MOLECULAR-BEAM EPITAXY
EXCITON LOCALIZATION
INVERSION ASYMMETRY
COMMON-ATOM
LIGHT-HOLE
HETEROSTRUCTURES
SUPERLATTICES
POLARIZATION
SEGREGATION
MORPHOLOGY
Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry
会议论文
9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001
作者:
Xu B
;
Ye XL
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/15
reflectance-difference spectroscopy
indium segregation
InGaAs/GaAs quantum wells
EPITAXY-GROWN INGAAS/GAAS
SURFACE SEGREGATION
INTERFACE
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