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Effects of algan/aln stacked interlayers on gan growth on si (111) 期刊论文
Chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: 3
作者:  Wang Hui;  Liang Hu;  Wang Yong;  Ng Kar-Wei;  Deng Dong-Mei
收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12
Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111) 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038103
Wang H (Wang Hui); Liang H (Liang Hu); Wang Y (Wang Yong); Ng KW (Ng Kar-Wei); Deng DM (Deng Dong-Mei); Lau KM (Lau Kei-May)
收藏  |  浏览/下载：96/3  |  提交时间：2010/04/22
Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface 期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 1, 页码: art. no. 013911
作者:  Chen L
收藏  |  浏览/下载：74/0  |  提交时间：2010/03/08
The influence of aln/gan superlattice intermediate layer on the properties of gan grown on si(111) substrates 期刊论文
Chinese physics, 2007, 卷号: 16, 期号: 5, 页码: 1467-1471
作者:  Liu Zhe;  Wang Xiao-Liang;  Wang Jun-Xi;  Hu Guo-Xin;  Guo Lun-Chun
收藏  |  浏览/下载：13/0  |  提交时间：2019/05/12
Metamorphic growth of 1.25-1.29 mu m ingaas quantum well lasers on gaas by molecular beam epitaxy 期刊论文
Journal of crystal growth, 2007, 卷号: 301, 页码: 971-974
作者:  Tangring, I.;  Wang, S. M.;  Sadeghi, M.;  Larsson, A.;  Wang, X. D.
收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12
Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD 期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 281-283
Liu Z (Liu Zhe); Wang XL (Wang Xiaoliang); Wang JX (Wang Junxi); Hu GX (Hu Guoxin); Guo LC (Guo Lunchun); Li JP (Li Jianping); Li JM (Li Jinmin); Zeng YP (Zeng Yiping)
收藏  |  浏览/下载：43/0  |  提交时间：2010/03/29
The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates 期刊论文
chinese physics, 2007, 卷号: 16, 期号: 5, 页码: 1467-1471
Liu Z (Liu Zhe); Wang XL (Wang Xiao-Liang); Wang JX (Wang Jun-Xi); Hu GX (Hu Guo-Xin); Guo LC (Guo Lun-Chun); Li JM (Li Jin-Min)
收藏  |  浏览/下载：56/0  |  提交时间：2010/03/29
GaN  
Effects of buffer layers on the stress and morphology of gan epilayer grown on si substrate by mocvd 期刊论文
Journal of crystal growth, 2007, 卷号: 298, 页码: 281-283
作者:  Liu, Zhe;  Wang, Xiaoliang;  Wang, Junxi;  Hu, Guoxin;  Guo, Lunchun
收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12
Metamorphic growth of 1.25-1.29 mu m InGaAs quantum well lasers on GaAs by molecular beam epitaxy 期刊论文
journal of crystal growth, 2007, 卷号: 301, 期号: 0, 页码: 971-974
Tangring, I (Tangring, I.); Wang, SM (Wang, S. M.); Sadeghi, M (Sadeghi, M.); Larsson, A (Larsson, A.); Wang, XD (Wang, X. D.)
收藏  |  浏览/下载：62/0  |  提交时间：2010/03/29
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; He, ZH; Sun, Z; Han, Q; Wu, RG
收藏  |  浏览/下载：224/60  |  提交时间：2010/03/29

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