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Effects of ultra-low al alloying in(al) as layer on the formation and evolution of inas/gaas quantum dots 期刊论文
Journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: 6
作者:  Zhou, X. L.;  Chen, Y. H.;  Li, T. F.;  Zhou, G. Y.;  Zhang, H. Y.
收藏  |  浏览/下载:14/0  |  提交时间:2019/05/12
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载:53/5  |  提交时间:2011/07/05
The two- to three-dimensional growth transition of inas/gaas epitaxy layer studied by reflectance difference spectroscopy 期刊论文
Journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: 4
作者:  Zhou, G. Y.;  Chen, Y. H.;  Tang, C. G.;  Liang, L. Y.;  Jin, P.
收藏  |  浏览/下载:23/0  |  提交时间:2019/05/12
Evaluation of thermal radiation dependent performance of gasb thermophotovoltaic cell based on an analytical absorption coefficient model 期刊论文
Solar energy materials and solar cells, 2010, 卷号: 94, 期号: 10, 页码: 1704-1710
作者:  Wang, Y.;  Chen, N. F.;  Zhang, X. W.;  Huang, T. M.;  Yin, Z. G.
收藏  |  浏览/下载:21/0  |  提交时间:2019/05/12
Evaluation of both composition and strain distributions in ingan epitaxial film using x-ray diffraction techniques 期刊论文
Chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: 7
作者:  Guo Xi;  Wang Hui;  Jiang De-Sheng;  Wang Yu-Tian;  Zhao De-Gang
收藏  |  浏览/下载:34/0  |  提交时间:2019/05/12
Tensile and compressive mechanical behavior of twinned silicon carbide nanowires 期刊论文
Acta materialia, 2010, 卷号: 58, 期号: 6, 页码: 1963-1971
作者:  Wang, Z. G.;  Li, J. B.;  Gao, F.;  Weber, W. J.
收藏  |  浏览/下载:30/0  |  提交时间:2019/05/12
A study of indium incorporation in in-rich ingan grown by movpe 期刊论文
Applied surface science, 2010, 卷号: 256, 期号: 10, 页码: 3352-3356
作者:  Guo, Y.;  Liu, X. L.;  Song, H. P.;  Yang, A. L.;  Xu, X. Q.
收藏  |  浏览/下载:24/0  |  提交时间:2019/05/12
Evaluation of thermal radiation dependent performance of GaSb thermophotovoltaic cell based on an analytical absorption coefficient model 期刊论文
solar energy materials and solar cells, 2010, 卷号: 94, 期号: 10, 页码: 1704-1710
Wang Y (Wang Y.); Chen NF (Chen N. F.); Zhang XW (Zhang X. W.); Huang TM (Huang T. M.); Yin ZG (Yin Z. G.); Wang YS (Wang Y. S.); Zhang H (Zhang H.)
收藏  |  浏览/下载:190/22  |  提交时间:2010/09/07
Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: art. no. 106802
Guo X (Guo Xi); Wang H (Wang Hui); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui)
收藏  |  浏览/下载:28/0  |  提交时间:2010/11/02
The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083513
Zhou GY (Zhou G. Y.); Chen YH (Chen Y. H.); Tang CG (Tang C. G.); Liang LY (Liang L. Y.); Jin P (Jin P.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载:13/0  |  提交时间:2010/12/05


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