CORC

在结果中检索

CORC

浏览/检索结果: 共9条，第1-9条 帮助

限定条件                
已选(0)清除 条数/页：   排序方式：
Surface Defects Enhanced Visible Light Photocatalytic H-2 Production for Zn-Cd-S Solid Solution 期刊论文
Small, 2016, 卷号: 12, 期号: 6
作者:  Zhang, X. Y.;  Z. Zhao;  W. W. Zhang;  G. Q. Zhang;  D. Qu
收藏  |  浏览/下载：13/0  |  提交时间：2017/09/11
Realization of cubic ZnMgO photodetectors for UVB applications 期刊论文
Journal of Materials Chemistry C, 2015, 卷号: 3, 期号: 2, 页码: 313-317
作者:  Fan, M. M.;  K. W. Liu;  X. Chen;  Z. Z. Zhang;  B. H. Li
收藏  |  浏览/下载：15/0  |  提交时间：2016/07/15
MgZnO合金薄膜带隙调制及其紫外探测器件 学位论文
硕士: 中国科学院大学, 2014
郑剑
收藏  |  浏览/下载：69/0  |  提交时间：2014/08/21
High Mg-content wurtzite MgZnO alloys and their application in deep-ultraviolet light-emitters pumped by accelerated electrons 期刊论文
Applied Physics Letters, 2014, 卷号: 104, 期号: 3, 页码: 4
Ni P. N.; Shan C. X.; Li B. H.; Shen D. Z.
收藏  |  浏览/下载：15/0  |  提交时间：2015/04/24
Controlled growth of pure cubic Mg0.3Zn0.7O thin films on c-plane sapphire by introducing graded buffer layer 期刊论文
Faguang Xuebao/中文 Journal of Luminescence, 2014, 卷号: 35, 期号: 9, 页码: 1040-1045
Zheng J.; Zhang Z.-Z.; Wang L.-K.; Han S.; Zhang J.-Y.; Liu Y.-C.; Wang S.-P.; Jiang M.-M.; Li B.-H.; Zhao D.-X.; Liu L.; Liu K.-W.; Shan C.-X.; Shen D.-Z.
收藏  |  浏览/下载：17/0  |  提交时间：2015/04/24
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique 会议论文
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H.
收藏  |  浏览/下载：38/0  |  提交时间：2014/05/15
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H.
收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.  
Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer 期刊论文
Acs Applied Materials & Interfaces, 2010, 卷号: 2, 期号: 7, 页码: 1918-1921
Han S.; Zhang J. Y.; Zhang Z. Z.; Zhao Y. M.; Wang L. K.; Zheng J. A.; Yao B.; Zhao D. X.; Shen D. Z.
收藏  |  浏览/下载：10/0  |  提交时间：2012/10/21
Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE 期刊论文
Journal of Crystal Growth, 2007, 卷号: 301, 页码: 373-377
Lu Y. M.; Wang X.; Zhang Z. Z.; Shen D. Z.; Su S. C.; Yao B.; Li B. H.; Zhang J. Y.; Zhao D. X.; Fan X. W.; Tang Z. K.
收藏  |  浏览/下载：13/0  |  提交时间：2012/10/21

©版权所有 ©2017 CSpace - Powered by CSpace